参数资料
型号: STR750FV2H6
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 48 MHz, RISC MICROCONTROLLER, PBGA100
封装: 10 X 10 MM, 1.70 MM HEIGHT, ROHS COMPLIANT, LFBGA-100
文件页数: 48/84页
文件大小: 1656K
代理商: STR750FV2H6
Electrical parameters
STR750Fxx STR751Fxx STR752Fxx STR755Fxx
Electro magnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electro-Static discharge (ESD)
Electro-Static Discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body Model and Machine Model. This test conforms to the
JESD22-A114A/A115A standard.
Table 29.
EMI characteristics
Symbo
l
Parameter
Conditions
Monitored
Frequency Band
Max vs. [fOSC4M/fHCLK]
Unit
4/32MHz
4/60MHz
SEMI
Peak level
Flash devices:
VDD_IO=3.3 V or 5 V,
TA=+25° C,
LQFP64 package
conforming to SAE J
1752/3
0.1 MHz to 30 MHz
22
26
dB
μV
30 MHz to 130 MHz
31
26
130 MHz to 1 GHz
19
23
SAE EMI Level
>4
-
Table 30.
Absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value(1)
1.
Data based on product characterisation, not tested in production.
Unit
VESD(HBM)
Electro-static discharge voltage
(Human Body Model)
TA=+25° C
2000
V
VESD(MM)
Electro-static discharge voltage
(Machine Model)
200
VESD(CDM)
Electro-static discharge voltage
(Charge Device Model)
750
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