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参数资料
| 型号： | SUD50N02-09P-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 20V DPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1300pF @ 10V |
| 功率 - 最大： | 6.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 标准包装 |
| 其它名称： | SUD50N02-09P-E3DKR |
SUD50N02-09P
Vishay Siliconix
SPECIFICATIONS (T J = 2 5 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = 250 m A
V DS = V GS , I D = 250 m A
20
0.8
3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
I GSS
I DSS
I D(on)
r DS(on)
g fs
V DS = 0 V, V GS = " 20 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 125 _ C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
V GS = 10 V, I D = 20 A, T J = 125 _ C
V GS = 4.5 V, I D = 20 A
V DS = 15 V, I D = 20 A
50
15
0.008
0.0135
" 100
1
50
0.0095
0.014
0.017
nA
m A
A
W
S
Dynamic a
Input Capacitance
C iss
1300
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
Gate-Drain Charge c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 10 V, f = 1 MHz
V DS = 10 V, V GS = 4.5 V, I D = 50 A
470
275
10.5
4.2
4.0
16
pF
nC
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
R g
t d(on)
t r
t d(off)
t f
V DD = 10 V, R L = 0.2 W
I D ^ 50 A, V GEN = 10 V, R g = 2.5 W
1.6
4.0
8
10
25
12
6
12
15
40
20
W
ns
Source-Drain Diode Ratings and Characteristic (T C = 25 _ C)
Pulsed Current
I SM
100
A
Diode Forward Voltage b
Source-Drain Reverse Recovery Time
V SD
t rr
I F = 50 A, V GS = 0 V
I F = 50 A, di/dt = 100 A/ m s
1.2
35
1.5
70
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 m s, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)
100
Output Characteristics
100
Transfer Characteristics
80
V GS = 10 thru 6 V
5V
80
T C = ? 55 _ C
25 _ C
60
40
20
0
4V
3V
60
40
20
0
125 _ C
0
2
4
6
8
10
0
1
2
3
4
5
6
www.vishay.com
2
V DS ? Drain-to-Source Voltage (V)
V GS ? Gate-to-Source Voltage (V)
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
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相关代理商/技术参数 |
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| SUD50N02-09P-GE3 | 制造商:Vishay Semiconductors 功能描述:N-CHANNEL 20-V (D-S) 150C MOSFET - Tape and Reel 制造商:Vishay Intertechnologies 功能描述:MOSFET 20V 0.0095ohm@10V 20A N-CH |
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