参数资料
型号: SUD50N02-09P-E3
厂商: Vishay Siliconix
文件页数: 5/5页
文件大小: 0K
描述: MOSFET N-CH D-S 20V DPAK
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.5 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 16nC @ 4.5V
输入电容 (Ciss) @ Vds: 1300pF @ 10V
功率 - 最大: 6.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252,(D-Pak)
包装: 标准包装
其它名称: SUD50N02-09P-E3DKR

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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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