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| 型号： | SUM110N05-06L-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 55V D2PAK |
| 标准包装： | 800 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3300pF @ 25V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 带卷 (TR) |
SUM110N05-06L
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V DS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
55
1
3
± 100
V
nA
V DS = 55 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 55 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 55 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current a
I D(on)
V DS ≥ 5 V, V GS = 10 V
V GS = 10 V, I D = 30 A
120
0.0047
0.006
A
Drain-Source On-State Resistance a
r DS(on)
V GS = 4.5 V, I D = 20 A
V GS = 10 V, I D = 30 A, T J = 125 °C
0.0066
0.0085
0.0102
Ω
V GS = 10 V, I D = 30 A, T J = 175 °C
0.0132
Forward Transconductance
a
g fs
V DS = 15 V, I D = 30 A
30
S
Dynamic b
Input Capacitance
C iss
3300
Gate-Source Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
c
Gate-Drain Charge c
Turn-On Delay Time c
C oss
C rss
Q g
Q gs
Q gd
t d(on)
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 30 V, V GS = 10 V, I D = 110 A
625
310
65
15
16
15
100
25
pF
nC
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 30 V, R L = 0.27 Ω
I D ? 110 A, V GEN = 10 V, R g = 2.5 Ω
15
35
15
25
55
25
ns
Source-Drain Diode Ratings and Characteristics T C = 25
°C b
Continuous Current
Pulsed Current
I S
I SM
110
240
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = 110 A, V GS = 0 V
I F = 110 A, di/dt = 100 A/μs
1.0
70
2.5
0.09
1.5
125
5
0.31
V
ns
A
μC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72005
S-80108-Rev. C, 21-Jan-08
相关PDF资料 |
PDF描述 |
|---|---|
| SUM110N06-3M9H-E3 | MOSFET N-CH 60V 110A D2PAK |
| SUM110N10-09-E3 | MOSFET N-CH 100V 110A D2PAK |
| SUM110P04-04L-E3 | MOSFET P-CH D-S 40V D2PAK |
| SUM110P06-08L-E3 | MOSFET P-CH D-S 60V D2PAK |
| SUM110P08-11-E3 | MOSFET P-CH D-S 80V D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SUM110N05-06L-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-Channel 55-V (D-S) 175 DEG.C MOSFET |
| SUM110N06-04L | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) TO-263 |
| SUM110N06-04L | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
| SUM110N06-04L-E3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) TO-263 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 110A 3PIN TO-263 - Rail/Tube |
| SUM110N06-05L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) 175-C MOSFET |
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