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型号： SUM110P04-04L-E3
厂商： Vishay Siliconix
文件页数： 2/8页
文件大小： 0K
描述： MOSFET P-CH D-S 40V D2PAK
标准包装： 800
系列： TrenchFET®
FET 型： MOSFET P 通道，金属氧化物
FET 特点： 逻辑电平门
漏极至源极电压(Vdss)： 40V
电流 - 连续漏极(Id) @ 25° C： 110A
开态Rds（最大）@ Id, Vgs @ 25° C： 4.2 毫欧 @ 30A，10V
Id 时的 Vgs(th)（最大）： 3V @ 250µA
闸电荷(Qg) @ Vgs： 350nC @ 10V
输入电容 (Ciss) @ Vds： 11200pF @ 25V
功率 - 最大： 3.75W
安装类型： 表面贴装
封装/外壳： TO-263-3，D²Pak（2 引线+接片），TO-263AB
供应商设备封装： TO-263（D2Pak）
包装： 带卷 (TR)
SUM110P04-04L
www.vishay.com
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Vishay Siliconix
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = -250 μA
V DS = V GS , I D = -250 μA
V DS = 0 V, V GS = ± 20 V
-40
-1
-3
± 100
V
nA
V DS = -40 V, V GS = 0 V
-1
Zero Gate Voltage Drain Current
I DSS
V DS = -40 V, V GS = 0 V, T J = 125 °C
-50
μA
V DS = -40 V, V GS = 0 V, T J = 175 °C
-250
On-State Drain Current a
I D(on)
V DS = -5 V, V GS = -10 V
V GS = -10 V, I D = -30 A
-120
0.0034
0.0042
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = -10 V, I D = -30 A, T J = 125 °C
V GS = -10 V, I D = -30 A, T J = 175 °C
V GS = -4.5 V, I D = -20 A
V DS = -15 V, I D = -30 A
20
0.005
0.0063
0.0076
0.0062
?
S
Dynamic b
Input Capacitance
C iss
11 200
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
Gate-Drain Charge c
Gate Resistance
Turn-On Delay Time c
C oss
C rss
Q g
Q gs
Q gd
R g
t d(on)
V GS = 0 V, V DS = -25 V, f = 1 MHz
V DS = -20 V, V GS = -10 V, I D = -110 A
1650
1200
235
45
65
3
25
350
40
pF
nC
?
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = -20 V, R L = 0.18 ?
I D ?? -110 A, V GEN = -10 V, R g = 2.5 ?
30
190
110
45
300
165
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 °C)
b
Continuous Current
Pulsed Current
I S
I SM
-110
-240
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = -85 A, V GS = 0 V
I F = -85 A, dI/dt = 100 A/μs
-1
65
-3.7
0.12
-1.5
100
-5.6
0.28
V
ns
A
μC
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2478-Rev. D, 09-Dec-13
2
Document Number: 72437
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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