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| 型号： | SUP60N02-4M5P-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 20V TO220AB |
| 标准包装： | 500 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 5950pF @ 10V |
| 功率 - 最大： | 3.75W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 带卷 (TR) |
SUP60N02-4m5P
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V DS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
20
1.0
3
± 100
V
nA
V DS = 20 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 20 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 20 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current a
I D(on)
V DS ≥ 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
100
0.0036
0.0045
A
Forward Transconductance
Drain-Source On-State Resistance a
a
r DS(on)
g fs
V GS = 10 V, I D = 20 A, T J = 125 °C
V GS = 10 V, I D = 20 A, T J = 175 °C
V GS = 4.5 V, I D = 20 A
V DS = 10 V, I D = 20 A
0.0052
95
0.0068
0.008
0.0065
Ω
S
Dynamic b
Input Capacitance
C iss
5950
Gate-Source Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge b
b
Gate-Drain Charge b
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 10 V, f = 1 MHz
V DS = 10 V, V GS = 4.5 V, I D = 50 A
985
365
33
18
7
50
pF
nC
Gate Resistance
Turn-On Delay Time
b
R g
t d(on)
0.75
1.5
15
2.3
25
Ω
Rise Time b
Turn-Off Delay Time
b
t r
t d(off)
V DD = 10 V, R L = 0.2 Ω
I D ? 50 A, V GEN = 10 V, R g = 1.0 Ω
7
35
11
55
ns
Fall Time b
t f
8
12
Source-Drain Diode Ratings and Characteristics T C = 25 °C c
Continuous Current
Pulsed Current
I S
I SM
60
100
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM
Q rr
I F = 20 A, V GS = 0 V
I F = 20 A, di/dt = 100 A/μs
0.85
45
1.7
0.039
1.5
90
3.4
0.155
V
ns
A
μC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69821
S-80182-Rev. A, 04-Feb-08
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