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参数资料
| 型号： | SUP90P06-09L-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 90A TO220AB |
| 标准包装： | 500 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 90A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.3 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 240nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9200pF @ 25V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
SUP90P06-09L
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = - 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
- 60
-1
-3
± 100
V
nA
V DS = - 60 V, V GS = 0 V
-1
Zero Gate Voltage Drain Current
I DSS
V DS = - 60 V, V GS = 0 V, T J = 125 °C
- 50
μA
V DS = - 60 V, V GS = 0 V, T J = 175 °C
- 250
On-State Drain Current a
I D(on)
V DS ? = - 5 V, V GS = - 10 V
V GS = - 10 V, I D = - 30 A
- 120
0.0074
0.0093
A
Forward Transconductance
Drain-Source On-State Resistance a
a
R DS(on)
g fs
V GS = - 10 V, I D = - 30 A, T J = 125 °C
V GS = - 10 V, I D = - 30 A, T J = 175 °C
V GS = - 4.5 V, I D = - 20 A
V DS = - 15 V, I D = - 30 A
20
0.0094
0.0150
0.0190
0.0118
?
S
Dynamic
b
Input Capacitance
C iss
9200
Gate-Source Charge
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
c
c
Gate Resistance
C oss
C rss
Q g
Q gs
Q gd
R g
V GS = 0 V, V DS = - 25 V, f = 1 MHz
V DS = - 30 V, V GS = - 10 V, I D = - 90 A
f = 1.0 MHz
975
760
160
40
36
3
240
pF
nC
?
Turn-On Delay Time
c
t d(on)
20
30
Rise Time c
Turn-Off Delay Time
c
t r
t d(off)
V DD = - 30 V, R L = 0.33 ?
I D ? - 90 A, V GEN = - 10 V, R g = 2.5 ?
190
140
285
210
ns
Fall Time c
t f
300
450
Source-Drain Diode Ratings and Characteristics (T C = 25 °C) b
Continuous Current
Pulsed Current
I S
I SM
- 90
- 200
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = - 50 A, V GS = 0 V
I F = - 50 A, dI/dt = 100 A/μs
- 1.0
60
-3
0.09
- 1.5
90
- 4.5
0.2
V
ns
A
μC
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
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