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| 型号： | TC4467COE |
| 厂商： | Microchip Technology |
| 文件页数： | 18/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR QUAD NAND 16SOIC |
| 标准包装： | 47 |
| 配置： | 低端 |
| 输入类型： | 与非 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 671 (CN2011-ZH PDF) |
TC4467/TC4468/TC4469
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-
uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation
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Device: TC4467/TC4468/TC4469
Literature Number: DS21425B
Questions:
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2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this data sheet easy to follow? If not, why?
4. What additions to the data sheet do you think would enhance the structure and subject?
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DS21425B-page18
? 2002 Microchip Technology Inc.
相关PDF资料 |
PDF描述 |
|---|---|
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| TCSD-12-01-N | CONN SOCKET 24 POS 2MM GOLD |
| TDGL004 | BOARD CEREBOT 32MX7 PIC32MX795 |
| TEACLIPPER-PIC-HV-PT | PROGRAMMER TEACLIPPER/PIC HI-V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4467COE713 | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467CPD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EJD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EOE | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EOE | 制造商:Microchip Technology Inc 功能描述:IC MOSFET DRVR SOIC16 |
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