- 您现在的位置：买卖IC网 > Datasheet目录365 > TC4467COE (Microchip Technology)IC MOSFET DVR QUAD NAND 16SOIC Datasheet资料下载
参数资料
| 型号： | TC4467COE |
| 厂商： | Microchip Technology |
| 文件页数： | 3/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR QUAD NAND 16SOIC |
| 标准包装： | 47 |
| 配置： | 低端 |
| 输入类型： | 与非 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 671 (CN2011-ZH PDF) |
TC4467/TC4468/TC4469
1.0
ELECTRICAL
CHARACTERISTICS
?Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
Absolute Maximum Ratings?
Supply Voltage ...............................................................+20 V
Input Voltage ............................. (GND – 5 V) to (V DD + 0.3 V)
Package Power Dissipation: (T A ≤ 70°C)
PDIP...................................................................800 mW
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
CERDIP .............................................................840 mW
SOIC ..................................................................760 mW
Package Thermal Resistance:
CERDIP R θ J-A ...................................................100°C/W
CERDIP R θ J-C .....................................................23°C/W
PDIP R θ J-A ..........................................................80°C/W
PDIP R θ J-C ..........................................................35°C/W
SOIC R θ J-A ..........................................................95°C/W
SOIC R θ J-C ..........................................................28°C/W
Operating Temperature Range:
C Version ................................................... 0°C to +70°C
E Version.................................................-40°C to +85°C
M Version ..............................................-55°C to +125°C
Maximum Chip Temperature ....................................... +150°C
Storage Temperature Range.........................-65°C to +150°C
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, T A = +25°C, with 4.5 V ≤ V DD ≤ 18 V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
V IH
V IL
I IN
2.4
—
-1.0
—
—
—
V DD
0.8
+1.0
V
V
μA
Note 3
Note 3
0 V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Continuous Output Current
V OH
V OL
R O
I PK
I DC
V DD – 0.025
—
—
—
—
—
—
10
1.2
—
—
0.15
15
—
300
V
V
?
A
mA
I LOAD = 100 μA (Note 1)
I LOAD = 10 mA (Note 1)
I OUT = 10 mA, V DD = 18 V
Single Output
—
—
500
Total Package
Latch-Up Protection Withstand
Reverse Current
I
—
500
—
mA
4.5 V ≤ V DD ≤ 16 V
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
t R
t F
t D1
t D2
—
—
—
—
15
15
40
40
25
25
75
75
nsec
nsec
nsec
nsec
Figure 4-1
Figure 4-1
Figure 4-1
Figure 4-1
Power Supply
Power Supply Current
I S
—
1.5
4
mA
Power Supply Voltage
V DD
4.5
—
18
V
Note 2
Note
1:
2:
3:
Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
When driving all four outputs simultaneously in the same direction, V DD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 μsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
? 2002 Microchip Technology Inc.
DS21425B-page 3
相关PDF资料 |
PDF描述 |
|---|---|
| TC4627EOE | IC MOSFET DRIVER 1.5A 16SOIC |
| TCN1.25SV | THERMASHIELD CONVOLUTED 1.25" 4' |
| TCSD-12-01-N | CONN SOCKET 24 POS 2MM GOLD |
| TDGL004 | BOARD CEREBOT 32MX7 PIC32MX795 |
| TEACLIPPER-PIC-HV-PT | PROGRAMMER TEACLIPPER/PIC HI-V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4467COE713 | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467CPD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EJD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EOE | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EOE | 制造商:Microchip Technology Inc 功能描述:IC MOSFET DRVR SOIC16 |
发布紧急采购，3分钟左右您将得到回复。