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参数资料
| 型号： | TC4467COE |
| 厂商： | Microchip Technology |
| 文件页数： | 19/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR QUAD NAND 16SOIC |
| 标准包装： | 47 |
| 配置： | 低端 |
| 输入类型： | 与非 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 671 (CN2011-ZH PDF) |
TC4467/TC4468/TC4469
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
XX
Examples:
Device
Temperature
Range
Package
a)
b)
TC4467COE: Commerical Temperature,
SOIC package.
TC4467CPD: Commercial Temperature,
PDIP package.
c)
TC4467MJD: Military Temperature,
Device:
TC4467:
1.2A Quad MOSFET Driver, NAND
Ceramic DIP package.
TC4468:
TC4469:
1.2A Quad MOSFET Driver, AND
1.2A Quad MOSFET Driver, AND/INV
a)
b)
TC4468COE713: Tape and Reel,
Commerical Temp., SOIC package.
TC4468CPD: Commercial Temperature,
Temperature Range:
C
E
M
=
=
=
0 ° C to +70 ° C
-40 ° C to +85 ° C (CERDIP only)
-55 ° C to +125 ° C (CERDIP only)
a)
PDIP package.
TC4469COE: Commercial Temperature,
SOIC package.
b)
TC4469CPD: Commercial Temperature,
Package:
PD
JD
OE
OE713
=
=
=
=
Plastic DIP, (300 mil body), 14-lead
Ceramic DIP, (300 mil body), 14-lead
SOIC (Wide), 16-lead
SOIC (Wide), 16-lead (Tape and Reel)
PDIP package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
? 2002 Microchip Technology Inc.
DS21425B-page19
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4467COE713 | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467CPD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EJD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EOE | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EOE | 制造商:Microchip Technology Inc 功能描述:IC MOSFET DRVR SOIC16 |
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