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参数资料
| 型号： | TC55VBM316ATGN40 |
| 元件分类： | SRAM |
| 英文描述： | 512K X 16 STANDARD SRAM, 55 ns, PDSO48 |
| 封装： | 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 |
| 文件页数： | 10/15页 |
| 文件大小： | 209K |
| 代理商： | TC55VBM316ATGN40 |
TC55VBM316ATGN/ASGN40,55
2002-05-14
4/15
DC CHARACTERISTICS (Ta
==== 40° to 85°C, VDD ==== 2.3 to 3.6 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
IIL
Input Leakage
Current
VIN = 0 V~VDD
±1.0
A
IOH
Output High Current
VOH = VDD 0.5 V
0.5
mA
IOL
Output Low Current
VOL = 0.4 V
2.1
mA
ILO
Output Leakage
Current
1
CE
= VIH or CE2 = VIL or LB = UB = VIH or
R/W
= VIL or OE = VIH, VOUT = 0 V~VDD
±1.0
A
40 ns
35
55 ns
30
lDDO1
1
CE
= VIL and CE2 = VIH and
R/W
= VIH, LB = UB = VIL,
IOUT = 0 mA,
Other Input
= VIH/VIL
tcycle
1
s
8
mA
40 ns
30
55 ns
25
lDDO2
Operating Current
1
CE
= 0.2 V and CE2 = VDD 0.2 V and
R/W
= VDD 0.2 V, LB = UB = 0.2 V,
IOUT = 0 mA,
Other Input
= VDD 0.2 V/0.2 V
tcycle
1
s
3
mA
IDDS1
1)
1
CE
= VIH or CE2 = VIL (at BYTE ≥ VDD 0.2 V or ≤ 0.2 V)
2) LB
= UB = VIH (at BYTE ≥ VDD 0.2 V)
1
mA
VDD =
3.3 V
± 0.3 V Ta = 40~85°C
10
Ta
= 25°C
0.7
Ta
= 40~40°C
2
IDDS2
Standby Current
1)
1
CE
= VDD 0.2 V, CE2 =
VDD 0.2 V (at BYTE ≥ VDD
0.2 V or ≤ 0.2 V)
2) CE2
= 0.2 V (at BYTE ≥ VDD
0.2 V or ≤ 0.2 V)
3) LB
= UB = VDD 0.2 V,
1
CE
= 0.2 V, CE2 = VDD 0.2
V (at BYTE
≥ VDD 0.2 V)
VDD = 3.0 V
Ta
= 40~85°C
5
A
CAPACITANCE (Ta
==== 25°C, f ==== 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
10
pF
COUT
Output Capacitance
VOUT = GND
10
pF
Note:
This parameter is periodically sampled and is not 100% tested.
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