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参数资料
| 型号： | TC55VBM316ATGN40 |
| 元件分类： | SRAM |
| 英文描述： | 512K X 16 STANDARD SRAM, 55 ns, PDSO48 |
| 封装： | 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 |
| 文件页数： | 9/15页 |
| 文件大小： | 209K |
| 代理商： | TC55VBM316ATGN40 |
TC55VBM316ATGN/ASGN40,55
2002-05-14
3/15
OPERATING MODE
MODE
1
CE
CE2
OE
R/W
BYTE
LB
UB
I/O1~I/O8
I/O9~I/O15
I/O16
POWER
L
H
L
H
L
*
Output
High-Z
A-1
IDDO
L
H
L
H
L
Output
IDDO
L
H
L
H
L
High-Z
Output
IDDO
Read
L
H
L
H
L
H
Output
High-Z
IDDO
L
H
*
L
*
Input
High-Z
A-1
IDDO
L
H
*
L
H
L
Input
IDDO
L
H
*
L
H
L
High-Z
Input
IDDO
Write
L
H
*
L
H
L
H
Input
High-Z
IDDO
L
H
L
*
High-Z
A-1
IDDO
L
H
L
High-Z
IDDO
L
H
L
High-Z
IDDO
Output Deselect
L
H
L
H
High-Z
IDDO
H
*
H or L
*
High-Z
IDDS
*
L
*
H or L
*
High-Z
IDDS
Standby
*
H
High-Z
IDDS
* = don't care
H = logic high
L = logic low
MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
VDD
Power Supply Voltage
0.3~4.2
V
VIN
Input Voltage
0.3*~4.2
V
VI/O
Input/Output Voltage
0.5~VDD + 0.5
V
PD
Power Dissipation
0.6
W
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
55~150
°C
Topr
Operating Temperature
40~85
°C
*:
2.0 V when measured at a pulse width of 20ns
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== 40° to 85°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
2.3
3.6
V
VDD = 2.3 V~2.7 V
2.0
VIH
Input High Voltage
VDD = 2.7 V~3.6 V
2.2
VDD + 0.3
V
VIL
Input Low Voltage
0.3*
VDD × 0.24
V
VDH
Data Retention Supply Voltage
1.5
3.6
V
*:
2.0 V when measured at a pulse width of 20ns
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