参数资料
型号: TC55VBM316ATGN40
元件分类: SRAM
英文描述: 512K X 16 STANDARD SRAM, 55 ns, PDSO48
封装: 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
文件页数: 4/15页
文件大小: 209K
代理商: TC55VBM316ATGN40
TC55VBM316ATGN/ASGN40,55
2002-05-14
12/15
Note:
(1)
In CE1 controlled data retention mode, minimum standby current mode is entered when CE2
≤ 0.2 V or
CE2
≥ VDD 0.2 V.
(2)
When CE1 is operating at the VIH(min.) level, the operating current is given by IDDS1 during the
transition of VDD from 2.3(2.7) to 2.2V(2.4 V).
(3)
In CE2 controlled data retention mode, minimum standby current mode is entered when CE2
≤ 0.2 V.
(4)
In UB (or LB ) controlled data retention mode, minimum standby current mode is entered when CE1
≤ 0.2 V or CE1 ≥ VDD 0.2 V, CE2 ≤ 0.2 V or CE2 ≥ VDD 0.2 V.
(5)
When UB (or LB ) is operating at the VIH(min.) level, the operating current is given by IDDS1 during
the transition of VDD from 2.3(2.7) to 2.2V(2.4 V).
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