参数资料
型号: TC58FT321-10
厂商: Toshiba Corporation
英文描述: 32M Bit (2M×16Bits ) CMOS Flash Memory(2M×16位CMOS闪速存储器)
中文描述: 32兆位(200万× 16位)的CMOS快闪记忆体(200万× 16位的CMOS闪速存储器)
文件页数: 30/46页
文件大小: 518K
代理商: TC58FT321-10
TC58FVT321/B321FT-10
2000-08-30 30/46
Hardware Sequence Flag (DATA
Hardware Sequence Flag (Toggle bit)
Address
CE
t
CMD
Last
Address
t
DF1
t
DF2
PA/BA
D
IN
t
PPW
/t
PCEW
/t
PBEW
t
OH
Last
Command
Data
WE
t
OEHP
t
CE
t
OE
DQ0~DQ6
Invalid
DQ7
7
DQ
OE
PA: Program address
BA: Block address
t
BUSY
BY
/
RY
Valid
Valid
t
ACC
Valid
Valid
PA/BA
t
CE
Address
CE
OE
t
CMD
Last
Address
D
IN
Last
Command
Data
WE
t
OE
t
OEHP
t
OEHT
DQ2/DQ6
Stop
*
Toggle
Valid
Toggle
Toggle
PA: Program address
BA: Block address
*
DQ2/DQ6 stops toggling when auto operation has been completed.
t
BUSY
BY
/
RY
t
PPW
/t
PCEW
/t
PBEW
相关PDF资料
PDF描述
TC58FVT321-10 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器)
TC58FV321 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
TC58V32ADC 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器)
TC59RM716RB-6 128M Bits(256K x16x32Banks)DRAM(128M位(256K x16x32组)动态RAM)
相关代理商/技术参数
参数描述
TC58FV321 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
TC58FVB004FT-10 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVB004FT-12 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVB004FT-85 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVB160A 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS