TC58NS256DC
2000-08-27 1/33
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
256-MBIT (32M
×
8 BITS) CMOS NAND E
2
PROM (32M BYTE SmartMedia
TM
)
DESCRIPTION
The TC58NS256 is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E
2
PROM) organized as 528 bytes
×
32 pages
×
2048 blocks. The device has a 528-byte
static register which allows program and read data to be transferred between the register and the memory cell
array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes
+
512 bytes:
528 bytes
×
32 pages).
The TC58NS256 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed.
The TC58NS256DC is a SmartMedia
TM
with ID and each device has 128 bit unique ID number embedded in the
device. This unique ID number is applicable to image files, music files, electronic books, and so on where copyright
protection is required.
The data stored in the TC58NS256DC needs to comply with the data format standardized by the SSFDC Forum
in order to maintain compatibility with other SmartMedia
TM
systems.
FEATURES
Organization
Memory cell array
528
×
64K
×
8
Register
528
×
8
Page size
528 bytes
Block size
(16K
+
512) bytes
Modes
Read, Reset, Auto Page Program,
Auto Block Erase, Status Read
Mode control
Serial input/output, Command control
Complies with the SmartMedia
TM
Electrical
Specification and Data Format Specification
issued by the SSFDC Forum
PIN ASSIGNMENT
(TOP VIEW)
PIN NAMES
I/O1~I/O8
I/O port
CE
Chip enable
WE
Write enable
RE
Read enable
CLE
Command latch enable
ALE
Address latch enable
WP
Write protect
BY
/
RY
Ready/Busy
GND
Ground Input
LVD
Low Voltage Detect
V
CC
Power supply
V
SS
Ground
TM
is a trademark of Toshiba Corporation.
Power supply
V
CC
=
3.3 V
±
0.3 V
Access time
Cell array-register
Serial Read cycle
Operating current
Read (50-ns cycle)
Program (avg.)
Erase (avg.)
Standby
Package
TC58NS256DC: FDC-22A (Weight: 1.8 g typ.)
25
μ
s max
50 ns min
10 mA typ.
10 mA typ.
10 mA typ.
100
μ
A max
V
SS
CLE ALE
I/O1 I/O2 I/O3 I/O4 V
SS
V
SS
BY
/
RY
V
CC
GND LVD I/O8 I/O7 I/O6 I/O5 V
CC
WE
WP
CE
RE
1 2 3 4 5 6 7 8 9 10 11
12
13
14
15
16
17
18
19
20
21
22
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
000707EBA2