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参数资料
| 型号： | TC58NS256DC |
| 厂商： | Toshiba Corporation |
| 英文描述： | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) |
| 中文描述： | 马鞍山暂定东芝数字集成电路硅栅CMOS 256兆位（32M的？8位）的CMOS NAND型E2PROM的（32兆字节SmartMediaTM） |
| 文件页数： | 31/33页 |
| 文件大小： | 709K |
| 代理商： | TC58NS256DC |
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TC58NS256DC
2000-08-27 31/33
(14)
Invalid blocks (bad blocks)
The device contains unusable blocks. Therefore, the following issues must be recognized:
Referring to the Block status area in the redundant area allows the
system to detect bad blocks in the accordance with the physical data
format issued by the SSFDC Forum. Detect the bad blocks by checking the
Block Status Area at the system power-on, and do not access the bad
blocks in the following routine.
The number of valid blocks at the time of shipment is as follows:
MIN
TYP.
MAX
UNIT
Valid (Good) Block Number
2008
2048
Block
(15)
Failure phenomena for Program and Erase operations
The device may fail during a Program or Erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
FAILURE MODE
DETECTION AND COUNTERMEASURE SEQUENCE
Block
Erase Failure
Status Read after Erase
→
Block Replacement
Page
Programming Failure
Status Read after Program
→
Block Replacement
(1) Block Verify after Program
→
Retry
Single Bit
Programming Failure
1
→
0
(2) ECC
ECC: Error Correction Code
Block Replacement
Program
Erase
When an error occurs for an Erase operation, prevent future accesses to this bad block (again by
creating a table within the system or by using another appropriate scheme).
(16)
Chattering of Connector
There may be contact chattering when the TC58NS256DC is inserted or removed from a connector.
This chattering may cause damage to the data in the TC58NS256DC. Therefore, sufficient time must be
allowed for contact bouncing to subside when a system is designed with SmartMedia
TM
.
(17)
The TC58NS256DC is formatted to comply with the Physical and Logical Data Format of the SSFDC Forum
at the time of shipping.
Bad Block
Bad Block
Figure 26.
When an error happens in Block A, try to
reprogram the data into another (Block B) by
loading from an external buffer. Then, prevent
further system accesses to Block A (by creating
a bad block table or by using an another
appropriate scheme).
Block A
Block B
Error occurs
Buffer
memory
Figure 27.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC58NVG0S3AFT05 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:1 GBIT (128M 】 8 BITS) CMOS NAND EEPROM |
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| TC58NVG0S3CTA | 制造商:Toshiba America Electronic Components 功能描述:1GB X8 LARGE BLOCK SLC NAND - Bulk |
| TC58NVG0S3EBAI4 | 制造商:Toshiba America Electronic Components 功能描述:SLC NAND Flash 3.3V 1Gbit 63-Pin TFBGA 制造商:Toshiba America Electronic Components 功能描述:1GB SLC NAND BGA 43NM LB (EEPROM) - Trays 制造商:Toshiba America Electronic Components 功能描述:1GBITS SLC BGA PACKAGE 制造商:Toshiba America Electronic Components 功能描述:NAND Flash 1Gbit 128Mx8bit 25ns TFBGA63 制造商:Toshiba 功能描述:SLC NAND Flash 3.3V 1Gbit 63-Pin TFBGA |
| TC58NVG0S3EBAI4C | 制造商:Toshiba America Electronic Components 功能描述:1GB X8 - Bulk |
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