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参数资料
| 型号： | TC58NS256DC |
| 厂商： | Toshiba Corporation |
| 英文描述： | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) |
| 中文描述： | 马鞍山暂定东芝数字集成电路硅栅CMOS 256兆位（32M的？8位）的CMOS NAND型E2PROM的（32兆字节SmartMediaTM） |
| 文件页数： | 18/33页 |
| 文件大小： | 709K |
| 代理商： | TC58NS256DC |
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TC58NS256DC
2000-08-27 18/33
DEVICE OPERATION
Read Mode (1)
Read mode (1) is set when a 00H command is issued to the Command register. Refer to Figure 3 below for
timing details and the block diagram.
Read Mode (2)
BY
/
RY
WE
CLE
RE
M
N
Start-address input
Busy
00H
CE
ALE
I/O
Cell array
Select page
N
M
Figure 3. Read mode (1) operation
527
A data transfer operation from the cell array to the register
starts on the rising edge of WE in the third cycle (after the
address information has been latched). The device will be in
Busy state during this transfer period. The
CE
signal must
stay Low after the third address input and during Busy state.
After the transfer period the device returns to Ready state.
Serial data can be output synchronously with the RE clock
from the start pointer designated in the address input cycle.
BY
/
RY
WE
CLE
RE
M
N
Start-address input
Busy
01H
CE
ALE
I/O
Cell array
Select page
N
M
Figure 4. Read mode (2) operation
527
The operation of the device after input of the 01H command is
the same as that of Read mode (1). If the start pointer is to be
set after column address 256, use Read mode (2).
However, for a Sequential Read, output of the next page
starts from column address 0.
256
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| TC58NVG0S3AFT05 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:1 GBIT (128M 】 8 BITS) CMOS NAND EEPROM |
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