参数资料
型号: TC58NS256DC
厂商: Toshiba Corporation
英文描述: TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
中文描述: 马鞍山暂定东芝数字集成电路硅栅CMOS 256兆位(32M的?8位)的CMOS NAND型E2PROM的(32兆字节SmartMediaTM)
文件页数: 26/33页
文件大小: 709K
代理商: TC58NS256DC
TC58NS256DC
2000-08-27 26/33
(4)
Acceptable commands after Serial Input command 80H
Once the Serial Input command 80H has been input, do not input any command other than the Program
Execution command 10H or the Reset command FFH.
If a command other than 10H or FFH is input, the Program operation is not performed.
(5)
Status Read during a Read operation
The device status can be read out by inputting the Status Read command 70H in Read mode. Once the
device has been set to Status Read mode by a 70H command, the device will not return to Read mode.
Therefore, a Status Read during a Read operation is prohibited.
However, when the Read command 00H is input during [A], Status mode is reset and the device returns to
Read mode. In this case, data output starts automatically from address N and address input is unnecessary.
(6)
Auto programming failure
Figure 16.
WE
BY
/
RY
80
FF
Address input
00
Address N
Command
CE
WE
BY
/
RY
RE
[A]
Status Read
command input
Status Read
Status output
Figure 17.
70
00
Fail
80
10
80
10
Address
M
Data
input
70
I/O
Address
N
Data
input
If the programming result for page address M is Fail, do not try to program the
page to address N in another block. Because the previous input data has been lost,
the same input sequence of 80H command, address and data is necessary.
10
80
Figure 18.
M
N
Command Other than
10H or FFH
80
Programming cannot be executed.
For this operation the FFH command is needed.
10
XX
相关PDF资料
PDF描述
TC58V32ADC 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器)
TC59RM716RB-6 128M Bits(256K x16x32Banks)DRAM(128M位(256K x16x32组)动态RAM)
TC59RM716RB-7 128M Bits(256K x16x32Banks)DRAM(128M位(256K x16x32组)动态RAM)
TC59RM716RB-8 128M Bits(256K x16x32Banks)DRAM(128M位(256K x16x32组)动态RAM)
TC59RM718MB-6 144M Bits(256K x18x32Banks)DRAM(144M位(256K x18x32组)动态RAM)
相关代理商/技术参数
参数描述
TC58NVG0S3AFT05 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:1 GBIT (128M 】 8 BITS) CMOS NAND EEPROM
TC58NVG0S3AFTI 制造商:Toshiba America Electronic Components 功能描述:1GB LARGE BLOCK INDUSTRIA
TC58NVG0S3CTA 制造商:Toshiba America Electronic Components 功能描述:1GB X8 LARGE BLOCK SLC NAND - Bulk
TC58NVG0S3EBAI4 制造商:Toshiba America Electronic Components 功能描述:SLC NAND Flash 3.3V 1Gbit 63-Pin TFBGA 制造商:Toshiba America Electronic Components 功能描述:1GB SLC NAND BGA 43NM LB (EEPROM) - Trays 制造商:Toshiba America Electronic Components 功能描述:1GBITS SLC BGA PACKAGE 制造商:Toshiba America Electronic Components 功能描述:NAND Flash 1Gbit 128Mx8bit 25ns TFBGA63 制造商:Toshiba 功能描述:SLC NAND Flash 3.3V 1Gbit 63-Pin TFBGA
TC58NVG0S3EBAI4C 制造商:Toshiba America Electronic Components 功能描述:1GB X8 - Bulk