- 您现在的位置：买卖IC网 > PDF目录384968 > TE28F008B3B150 (INTEL CORP) SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE PDF资料下载
参数资料
| 型号： | TE28F008B3B150 |
| 厂商： | INTEL CORP |
| 元件分类： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 中文描述： | 1M X 8 FLASH 3V PROM, 150 ns, PDSO40 |
| 封装： | 10 X 20 MM, TSOP-40 |
| 文件页数： | 16/49页 |
| 文件大小： | 408K |
| 代理商： | TE28F008B3B150 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页当前第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页
SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
E
16
PRELIMINARY
reached using the commands summarized in Table
4. A comprehensive chart showing the state
transitions is in Appendix B.
3.2.1
READ ARRAY
When RP# transitions from V
IL
(reset) to V
IH
, the
device will be in the read array mode and will
respond to the read control inputs (CE#, address
inputs, and OE#) without any commands being
written to the CUI.
When the device is in the read array mode, four
control signals must be controlled to obtain data at
the outputs.
WE# must be logic high (V
IH
)
CE# must be logic low (V
IL
)
OE# must be logic low (V
IL
)
RP# must be logic high (V
IH
)
In addition, the address of the desired location must
be applied to the address pins.
If the device is not in read array mode, as would be
the case after a program or erase operation, the
Read Array command (FFH) must be written to the
CUI before array reads can take place.
Table 4. Command Codes and Descriptions
Code
Device Mode
Description
00
Invalid/
Reserved
Unassigned commands that should not be used. Intel reserves the right to
redefine these codes for future functions.
FF
Read Array
Places the device in read array mode, such that array data will be output on the
data pins.
40
Program
Set-Up
This is a two-cycle command. The first cycle prepares the CUI for a program
operation. The second cycle latches addresses and data information and
initiates the WSM to execute the Program algorithm. The flash outputs status
register data when CE# or OE# is toggled. A Read Array command is required
after programming to read array data. See Section 3.2.4.
10
Alternate
Program Set-Up
(See 40H/Program Set-Up)
20
Erase
Set-Up
Prepares the CUI for the Erase Confirm command. If the next command is not
an Erase Confirm command, then the CUI will (a) set both SR.4 and SR.5 of the
status register to a
“1,” (b) place the device into the read status register mode,
and (c) wait for another command. See Section 3.2.5.
D0
Program
Resume
Erase Resume/
Erase Confirm
If the previous command was an Erase Set-Up command, then the CUI will
close the address and data latches, and begin erasing the block indicated on the
address pins. If a program or erase operation was previously suspended, this
command will resume that operation.
During program/erase, the device will respond only to the Read Status Register,
Program Suspend/Erase Suspend commands and will output status register
data when CE# or OE# is toggled.
相关PDF资料 |
PDF描述 |
|---|---|
| TE28F008B3T120 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3T150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3B150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3T120 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3T150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TE28F008B3B90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3BA110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F008B3BA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3T110 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
| TE28F008B3T120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
发布紧急采购，3分钟左右您将得到回复。