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参数资料
| 型号： | TE28F008B3B150 |
| 厂商： | INTEL CORP |
| 元件分类： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 中文描述： | 1M X 8 FLASH 3V PROM, 150 ns, PDSO40 |
| 封装： | 10 X 20 MM, TSOP-40 |
| 文件页数： | 6/49页 |
| 文件大小： | 408K |
| 代理商： | TE28F008B3B150 |
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SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
E
6
PRELIMINARY
1.2
Product Overview
Intel provides the most flexible voltage solution in
the flash industry, providing three discrete voltage
supply pins: V
CC
for read operation, V
CCQ
for output
swing, and V
PP
for program and erase operation.
Discrete supply pins allow system designers to use
the optimal voltage levels for their design. All Smart
3 Advanced Boot Block flash memory products
provide program/erase capability at 2.7V or 12V
and read with V
CC
at 2.7V. Since many designs
read from the flash memory a large percentage of
the time, 2.7V V
CC
operation can provide
substantial power savings. The 12V V
PP
option
maximizes program and erase performance during
production programming.
The Smart 3 Advanced Boot Block flash memory
products are high-performance devices with low
power operation. The available densities for the
byte-wide devices (x8) are
a.
8-Mbit
organized as 1 Mbyte of 8 bits each
16-Mbit (16,777,216-bit) flash memory
organized as 2 Mbytes of 8 bits each.
(8,388,608-bit)
flash
memory
b.
For word-wide devices (x16) see the Smart 3
Advanced Boot Block Word-Wide Flash Memory
Family datasheet.
The parameter blocks are located at either the top
(denoted by -T suffix) or the bottom (-B suffix) of the
address map in order to accommodate different
microprocessor protocols for kernel code location.
The upper two (or lower two) parameter blocks can
be locked to provide complete code security for
system initialization code. Locking and unlocking is
controlled by WP# (see Section 3.3 for details).
The Command User Interface (CUI) serves as the
interface
between
the
microcontroller and the internal operation of the
flash memory. The internal Write State Machine
(WSM) automatically executes the algorithms and
timings
necessary
for
operations, including verification, thereby un-
burdening the microprocessor or microcontroller.
The status register indicates the status of the WSM
by signifying block erase or byte program
completion and status.
microprocessor
or
program
and
erase
Program and erase automation allows program and
erase operations to be executed using an industry-
standard two-write command sequence to the CUI.
Data writes are performed in byte increments. Each
byte in the flash memory can be programmed
independently of other memory locations; every
erase operation erases all locations within a block
simultaneously. Program suspend allows system
software to suspend the program command in order
to read from any other block. Erase suspend allows
system software to suspend the block erase
command in order to read from or program data to
any other block.
The Smart 3 Advanced Boot Block flash memory is
also designed with an Automatic Power Savings
(APS) feature which minimizes system current
drain, allowing for very low power designs. This
mode is entered immediately following the
completion of a read cycle.
When the CE# and RP# pins are at V
CC
, the I
CC
CMOS standby mode is enabled. A deep power-
down mode is enabled when the RP# pin is at
GND, minimizing power consumption and providing
write protection. I
CC
current in deep power-down is
1 μA typical (2.7V V
CC
). A minimum reset time of
t
PHQV
is required from RP# switching high until
outputs are valid to read attempts. With RP# at
GND, the WSM is reset and Status Register is
cleared. Section 3.5 contains additional information
on using the deep power-down feature, along with
other power consumption issues.
The RP# pin provides additional protection against
unwanted command writes that may occur during
system reset and power-up/down sequences due to
invalid system bus conditions (see Section 3.6).
Refer to the DC Characteristics Table, Sections 5.1
and 6.1, for complete current and voltage
specifications. Refer to the AC Characteristics
Table, Section 7.0, for read, program and erase
performance specifications.
2.0
PRODUCT DESCRIPTION
This section explains device pin description and
package pinouts.
相关PDF资料 |
PDF描述 |
|---|---|
| TE28F008B3T120 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3T150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3B150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3T120 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TE28F008B3B90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3BA110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F008B3BA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3T110 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
| TE28F008B3T120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
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