参数资料
型号: TE28F008B3B150
厂商: INTEL CORP
元件分类: DRAM
英文描述: SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
中文描述: 1M X 8 FLASH 3V PROM, 150 ns, PDSO40
封装: 10 X 20 MM, TSOP-40
文件页数: 22/49页
文件大小: 408K
代理商: TE28F008B3B150
SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
E
22
PRELIMINARY
Start
Write 40H
Program Address/Data
Read Status Register
SR.7 = 1
Full Status
Check if Desired
Program Complete
Read Status Register
Data (See Above)
V
PP
Range Error
Programming Error
Attempted Program to
Locked Block - Aborted
Program Successful
SR.3 =
SR.4 =
SR.1 =
FULL STATUS CHECK PROCEDURE
Bus Operation
Write
Write
Standby
Repeat for subsequent programming operations.
SR Full Status Check can be done after each program or after a sequence of
program operations.
Write FFH after the last program operation to reset device to read array mode.
Bus Operation
Standby
Standby
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,
in cases where multiple bytes are programmed before full status is checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
No
Yes
1
0
1
0
1
0
Command
Program Setup
Program
Comments
Data = 40H
Data = Data to Program
Addr = Location to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
Check SR.3
1 = V
PP
Low Detect
Check SR.1
1 = Attempted Program to
Locked Block - Program
Aborted
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Standby
Check SR.4
1 = V
PP
Program Error
0605-07
Figure 6. Automated Byte Programming Flowchart
相关PDF资料
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