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参数资料
| 型号： | TE28F016B3T120 |
| 厂商： | INTEL CORP |
| 元件分类： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 中文描述： | 2M X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封装： | 10 X 20 MM, TSOP-40 |
| 文件页数： | 3/49页 |
| 文件大小： | 408K |
| 代理商： | TE28F016B3T120 |
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E
SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
3
PRELIMINARY
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION .............................................5
1.1 Smart 3 Advanced Boot Block Flash
Memory Enhancements ..............................5
1.2 Product Overview.........................................6
2.0 PRODUCT DESCRIPTION..............................6
2.1 Package Pinouts..........................................7
2.2 Block Organization.....................................11
2.2.1 Parameter Blocks................................11
2.2.2 Main Blocks.........................................11
3.0 PRINCIPLES OF OPERATION .....................14
3.1 Bus Operation............................................14
3.1.1 Read....................................................15
3.1.2 Output Disable.....................................15
3.1.3 Standby...............................................15
3.1.4 Deep Power-Down/Reset....................15
3.1.5 Write....................................................15
3.2 Modes of Operation....................................15
3.2.1 Read Array..........................................16
3.2.2 Read Intelligent Identifier.....................17
3.2.3 Read Status Register ..........................17
3.2.4 Program Mode.....................................18
3.2.5 Erase Mode.........................................19
3.3 Block Locking.............................................26
3.3.1 V
PP
= V
IL
for Complete Protection .......26
3.3.2 WP# = V
IL
for Block Locking................26
3.3.3 WP# = V
IH
for Block Unlocking............26
3.4 V
PP
Program and Erase Voltages ..............26
3.5 Power Consumption...................................26
3.5.1 Active Power .......................................26
3.5.2 Automatic Power Savings (APS) .........27
3.5.3 Standby Power....................................27
3.5.4 Deep Power-Down Mode.....................27
3.6 Power-Up/Down Operation.........................27
3.6.1 RP# Connected to System Reset ........27
3.6.2 V
CC
, V
PP
and RP# Transitions.............27
3.7 Power Supply Decoupling ..........................28
3.7.1 V
PP
Trace on Printed Circuit Boards....28
4.0 ABSOLUTE MAXIMUM RATINGS................29
5.0 OPERATING CONDITIONS
(V
CCQ
= 2.7V
–3.6V).......................................29
5.1 DC Characteristics: V
CCQ
= 2.7V
–3.6V.......30
6.0 OPERATING CONDITIONS
(V
CCQ
= 1.8V
–2.2V).......................................34
6.1 DC Characteristics: V
CCQ
= 1.8V
–2.2V.......34
7.0 AC CHARACTERISTICS...............................39
7.1 Reset Operations .......................................43
APPENDIX A: Ordering Information .................45
APPENDIX B: Write State Machine Current/
Next States ..................................................46
APPENDIX C: Access Time vs.
Capacitive Load...........................................47
APPENDIX D: Architecture Block Diagram ......48
APPENDIX E: Additional Information ...............49
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相关代理商/技术参数 |
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| TE28F016B3T150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3T90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3TA110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3TA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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