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| 型号： | TN0200K-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 730MA SOT23-3 |
| 产品目录绘图： | SC75(A), SC89-3, SOT-23, SOT-323 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 730mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 400 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 2nC @ 4.5V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1661 (CN2011-ZH PDF) |
| 其它名称： | TN0200K-T1-E3DKR |
New Product
TN0200K
Vishay Siliconix
SPECIFICATIONS T A = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = 10 μA
V DS = V GS , I D = 50 μA
20
0.45
0.6
1.0
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS = ± 4.5 V
±5
Zero Gate Voltage Drain Current
On-State Drain Current a
I DSS
I D(on)
V DS = 20 V, V GS = 0 V
T J = 55 °C
V DS ≥ 5 V, V GS = 4.5 V
V DS ≥ 5 V, V GS = 2.5 V
2.5
1.5
0.1
10
μA
A
Drain-Source On-Resistance a
Forward Transconductance a
r DS(on)
g fs
V GS = 4.5 V, I D = 0.6 A
V GS = 2.5 V, I D = 0.6 A
V DS = 5 V, I D = 0.6 A
0.2
0.25
2.2
0.4
0.5
Ω
S
Diode Forward
Voltage a
V SD
I S = 0.3 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall TIme
Q g
Q gs
Q gd
R g
t d(on)
t r
t d(off)
t f
V DS = 10 V, V GS = 4.5 V
I D = 0.6 A
V DD = 10 V, R L = 16 Ω
I D ? 0.6 A, V GEN = 4.5 V
R g = 6 Ω
1400
190
300
105
17
20
55
30
2000
25
30
85
45
pC
Ω
ns
Notes:
a. Pulse test: PW ≤ 300 μs duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
V GS = 5 thru 2.5 V
4
T J = - 55 °C
3.2
3
2.4
1.6
2V
2
25 °C
125 °C
0.8
0.0
1.5 V
1V
1
0
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
www.vishay.com
2
V DS – Drain-to-Source Voltage (V)
Output Characteristics
V GS – Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
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