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| 型号： | TN0200K-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 730MA SOT23-3 |
| 产品目录绘图： | SC75(A), SC89-3, SOT-23, SOT-323 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 730mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 400 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 2nC @ 4.5V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1661 (CN2011-ZH PDF) |
| 其它名称： | TN0200K-T1-E3DKR |
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All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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相关代理商/技术参数 |
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| TN0200T | 功能描述:MOSFET 20V 1.2A 0.35W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| TN0200TS | 功能描述:MOSFET 20V 1.2A 1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| TN0200TS-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 1.2A 3-Pin TO-236 T/R |
| TN0200T-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 0.73A 3-Pin TO-236 T/R |
| TN02-010-0130-2 | 功能描述:重负荷电源连接器 FEMALE CONTACT RoHS:否 制造商:Hirose Connector 系列:PS2 产品类型:Connectors 位置/触点数量: 端接类型:Crimp 触点材料: 触点电镀:Gold 电压额定值: 电流额定值:300 A 附件类型: |
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