参数资料
型号: TPS24713DGSR
厂商: TEXAS INSTRUMENTS INC
元件分类: 电源管理
英文描述: POWER SUPPLY SUPPORT CKT, PDSO10
封装: GREEN, PLASTIC, MSOP-10
文件页数: 16/34页
文件大小: 2148K
代理商: TPS24713DGSR
(
)
J(MAX)
A(MAX)
DS(on)(MAX)
2
MAX
JA
DS(on)(MAX)
2
T
r
,
I
R
therefore,
150 C
50 C
r
13.6 m
12 A
51 C / W
q
-
=
° -
°
=
W
°
(
)
(
)
(
)
(
)
2
J(MAX)2
MAX
DS(on)
CA
A(MAX)
LIM
JC
2
LIM
T
I
r
R
T
P
0.8
,
R
therefore,
130 C
12 A
0.002
51 C / W
1.8 C / W
50 C
P
0.8
29.3 W
1.8 C / W
q
é
ù
-
+
é
ù
° -
W
°
-
°
+
°
ê
ú
=
°
=
=
W
W
PROG
LIM
SENSE
PROG
3125
R
,
P
R
therefore,
3125
R
53.15 k
29.3 W
0.002
SLVSAL2C
– JANUARY 2011 – REVISED MAY 2011
The next factor to consider is the drain-to-source voltage rating, VDS(MAX), of the MOSFET. Although the
MOSFET only sees 12 V DC, it may experience much higher transient voltages during extreme conditions, such
as the abrupt shutoff that occurs during a fast trip. A TVS may be required to limit inductive transients under such
conditions. A transistor with a VDS(MAX) rating of at least twice the nominal input power-supply voltage is
recommended regardless of whether a TVS is used or not.
Next select the on resistance of the transistor, rDS(on). The maximum on-resistance must not generate a voltage
greater then the minimum power-good threshold voltage of 140 mV. Assuming a current limit of 12 A, a
maximum rDS(on) of 11.67 m is required. Also consider the effect of rDS(on) upon the maximum operating
temperature TJ(MAX) of the MOSFET. Equation 6 computes the value of rDS(on)(MAX) at a junction temperature of
TJ(MAX). Most manufacturers list rDS(on)(MAX) at 25°C and provide a derating curve from which values at other
temperatures can be derived. Compute the maximum allowable on-resistance, rDS(on)(MAX), using Equation 6.
(6)
Taking these factors into consideration, the TI CSD16403Q5 was selected for this example. This transistor has a
VGS(MAX) rating of 16 V, a VDS(MAX) rating of 25 V, and a maximum rDS(on) of 2.8 mΩ at room temperature. During
normal circuit operation, the MOSFET can have up to 10 A flowing through it. The power dissipation of the
MOSFET equates to 0.24 W and a 9.6
°C rise in junction temperature. This is well within the data sheet limits for
the MOSFET. The power dissipated during a fault (e.g., output short) is far larger than the steady-state power.
The power handling capability of the MOSFET must be checked during fault conditions.
STEP 3. Choose Power-Limit Value, PLIM, and RPROG
MOSFET M1 dissipates large amounts of power during inrush. The power limit PLIM of the TPS24710/11/12/13
should be set to prevent the die temperature from exceeding a short-term maximum temperature, TJ(MAX)2. The
short-term TJ(MAX)2 could be set as high as 130°C while still leaving ample margin to the usual manufacturer’s
rating of 150
°C. Equation 7 is an expression for calculating PLIM,
(7)
where RθJC is the junction-to-case thermal resistance of the MOSFET, rDS(on) is the resistance at the maximum
operating temperature, and the factor of 0.8 represents the tolerance of the constant-power engine. For an
ambient temperature of 50
°C, the calculated maximum PLIM is 29.3 W. From Equation 1, a 53.6-k, 1% resistor
is selected for RPROG (see Equation 8).
(8)
STEP 4. Choose Output Voltage Rising Time, tON, CT
Copyright
2011, Texas Instruments Incorporated
23
Product Folder Link(s): TPS24710 TPS24711 TPS24712 TPS24713
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