参数资料
型号: TPS2540RTET
厂商: TEXAS INSTRUMENTS INC
元件分类: 电源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC16
封装: GREEN, PLASTIC, WQFN-16
文件页数: 33/37页
文件大小: 999K
代理商: TPS2540RTET
SLVSAG2A
– OCTOBER 2010 – REVISED APRIL 2011
ELECTRICAL CHARACTERISTICS (continued)
Conditions are -40
≤ TJ ≤ 125°C unless otherwise noted. VEN (if TPS2540 or TPS2540A) = VDSC (if TPS2541) = VIN = 5 V,
RFAULT = 10 kΩ, RILIM0 = 210 kΩ, RILIM1 = 20 kΩ, ILIM_SEL = 0 V, CTL1 = CTL2 = GND, CTL3 = VIN (TPS2540/40A) or CTL3 =
GND (TPS2541), unless otherwise noted. Positive currents are into pins. Typical values are at 25
°C. All voltages are with
respect to GND unless otherwise noted.
PARAMETER
TEST CONDITIONS(1)
MIN
TYP
MAX
UNIT
Undervoltage Lockout
Low-level input voltage,
VUVLO
VIN rising
3.9
4.1
4.3
V
IN
Hysteresis, IN
100
mV
FAULT
Output low voltage,
IFAULT = 1 mA
100
mV
FAULT
Off-state leakage
VFAULT = 5.5 V
1
A
FAULT deglitch
FAULT assertion or de-assertion due to over-current condition
5
8.5
12
ms
CTLx Inputs
CTLx pins turn on/off
VCTL
0.9
1.1
1.65
V
threshold, falling
VCTL_HYS
CTLx hysteresis
200
mV
Input current
VCTL = 0 V or 5.5 V
-0.5
0.5
A
Thermal Shutdown
Thermal shutdown
155
threshold
Thermal shutdown
°C
135
threshold in current-limit
Hysteresis
10
High-Bandwidth Analog Switch
VDP/DM_OUT = 0 V, IDP/DM_IN = + 30 mA
2
4
On resistance DP/DM
RHS_ON
high-speed switch
VDP/DM_OUT = 2.4 V, IDP/DM_IN = - 15 mA
3
6
Ω
On resistance match
VDP/DM_OUT = 0 V, IDP/DM_IN = + 30 mA
0.05
0.15
ΔRHS_ON
between channels
VDP/DM_OUT = 2.4 V, IDP/DM_IN = - 15 mA
0.05
0.15
DP/DM switch
DP/DM off state
CIO_OFF
f = 1 MHz, switch off
3
3.6
capacitance (2)
pF
DP/DM on state
CIO_ON
f = 1 MHz, switch on
5.4
6.2
capacitance (3)
OIRR
Off state isolation
RL = 50 Ω, f = 250 MHz, -40 ≤ TJ ≤ 125°C
33
dB
On-state cross channel
XTALK
RL = 50 Ω, f = 250 MHz, -40 ≤ TJ ≤ 125°C
52
isolation
IOFF
Off state leakage
VDM_IN = VDP_IN = 3.6 V, VDM_OUT = VDP_OUT = 0 V
0.1
1.5
A
BW
Bandwidth (-3 dB)
RL = 50 Ω
2.6
GHz
tpd
Propagation delay
0.25
Skew between opposite
ns
tSK
transitions of the same
0.1
0.2
port (tPHL –tPLH)
(2)
The resistance in series with this parasitic capacitance to GND is typically 250
Ω.
(3)
The resistance in series with this parasitic capacitance to GND is typically 150
Ω.
Copyright
2010–2011, Texas Instruments Incorporated
5
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