参数资料
型号: TPS54260DRCR
厂商: Texas Instruments
文件页数: 3/52页
文件大小: 0K
描述: IC REG BUCK ADJ 2.5A 10SON
标准包装: 3,000
系列: SWIFT™, Eco-Mode™
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 0.8 V ~ 58 V
输入电压: 3.5 V ~ 60 V
PWM 型: 电流模式
频率 - 开关: 100kHz ~ 2.5MHz
电流 - 输出: 2.5A
同步整流器:
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 10-VFDFN 裸露焊盘
包装: 带卷 (TR)
供应商设备封装: 10-SON 裸露焊盘(3x3)

www.ti.com
THERMA L INFORMATION
SLVSA86A – MARCH 2010 – REVISED DECEMBER 2010
THERMAL METRIC (1) (2)
TPS54260
DGQ (10 PINS) DRC (10 PINS)
UNITS
q JA
Junction-to-ambient thermal resistance (standard board)
62.5
40
q JA
y JT
Junction-to-ambient thermal resistance (custom board)
Junction-to-top characterization parameter
(3)
57
1.7
56.5
0.6
y JB
q JCtop
q JCbot
q JB
Junction-to-board characterization parameter
Junction-to-case(top) thermal resistance
Junction-to-case(bottom) thermal resistance
Junction-to-board thermal resistance
20.1
83
21
28
7.5
65
7.8
8
°C/W
(1)
(2)
(3)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953 .
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.
Test boards conditions:
(a) 3 inches x 3 inches, 2 layers, thickness: 0.062 inch
(b) 2 oz. copper traces located on the top of the PCB
(c) 2 oz. copper ground plane, bottom layer
(d) 6 thermal vias (13mil) located under the device package
ELECTRICAL CHARACTERISTICS
T J = –40°C to 150°C, VIN = 3.5 to 60V (unles s otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage
Internal undervoltage lockout threshold
No voltage hysteresis, rising and falling
3.5
2.5
60
V
V
Shutdown supply current
Operating: nonswitching supply current
EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 60 V
VSENSE = 0.83 V, VIN = 12 V, 25°C
1.3
138
4
200
m A
ENABLE AND UVLO (EN PIN)
Enable threshold voltage
Input current
No voltage hysteresis, rising and falling, 25°C
Enable threshold +50 mV
Enable threshold –50 mV
1.15
1.25
–3.8
–0.9
1.36
V
m A
Hysteresis current
VOLTAGE REFERENCE
–2.9
m A
Voltage reference
T J = 25°C
0.792
0.784
0.8
0.8
0.808
0.816
V
HIGH-SIDE MOSFET
On-resistance
VIN = 3.5 V, BOOT-PH = 3 V
VIN = 12 V, BOOT-PH = 6 V
300
200
410
m ?
ERROR AMPLIFIER
Input current
50
nA
Error amplifier transconductance (g M )
–2 m A < I COMP < 2 m A, V COMP = 1 V
310
m Mhos
V VSENSE = 0.4 V
Error amplifier transconductance (g M ) during –2 m A < I COMP < 2 m A, V COMP = 1 V,
slow start
70
m Mhos
Error amplifier dc gain
Error amplifier bandwidth
Error amplifier source/sink
COMP to switch current transconductance
V VSENSE = 0.8 V
V (COMP) = 1 V, 100 mV overdrive
10,000
2700
±27
10.5
V/V
kHz
m A
A/V
CURRENT LIMIT
Current limit threshold
VIN = 12 V, T J = 25°C
3.5
6.1
A
THERMAL SHUTDOWN
Thermal shutdown
Copyright ? 2010, Texas Instruments Incorporated
Product Folder Link(s): TPS54260
182
°C
3
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