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| 型号： | TSHA650 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| 中文描述： | 红外发光二极管的GaAIAs在？5毫米（翻译- 13 / 4）包装 |
| 文件页数： | 1/6页 |
| 文件大小： | 88K |
| 代理商： | TSHA650 |
TSHA650.
Vishay Telefunken
1 (6)
Rev. 3, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81022
GaAlAs Infrared Emitting Diodes in 5 mm (T–1 )
Package
Description
The TSHA650. series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
In contrast to the TSHA550. series lead stand–offs are
omitted.
Features
Extra high radiant power
Suitable for high pulse current operation
Standard T–1 ( 5 mm) package
Leads formed without stand–off
Angle of half intensity
=
±
24
Peak wavelength
p
= 875 nm
High reliability
Good spectral matching to Si photodetectors
94 8389
Applications
Infrared remote control and free air transmission systems with high power and comfortable radiation angle re-
quirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
2.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
C
C
C
C
K/W
t
p
/T = 0.5, t
p
= 100 s
t
p
= 100 s
t
5sec, 2 mm from case
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| TSHF5400 | High Speed IR Emitting Diode in ?5 mm (T-13/4) Package |
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| TSKS5400 | GaAs Infrared Emitting Diode in Side View Package |
| TSL0709RA | RF/Coaxial Connector; RF Coax Type:BNC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TSHA6500 | 功能描述:红外发射源 5V 22mW 875nm 24 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSHA6500_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Infrared Emitting Diode, 875 nm, GaAlAs |
| TSHA6501 | 功能描述:红外发射源 5V 23mW 875nm 24 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSHA6502 | 功能描述:红外发射源 5V 24mW 875nm 24 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSHA6503 | 功能描述:红外发射源 5V 25mW 875nm 24 deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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