- 您现在的位置：买卖IC网 > PDF目录385019 > TSHA650 (Vishay Intertechnology,Inc.) GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package PDF资料下载
参数资料
| 型号： | TSHA650 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| 中文描述： | 红外发光二极管的GaAIAs在？5毫米（翻译- 13 / 4）包装 |
| 文件页数： | 2/6页 |
| 文件大小： | 88K |
| 代理商： | TSHA650 |
TSHA650.
Vishay Telefunken
2 (6)
Rev. 3, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81022
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Temp. Coefficient of
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
p
Rise Time
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA
Symbol
V
F
TK
VF
I
R
C
j
TK
e
Min
Typ
1.5
–1.6
Max
1.8
Unit
V
mV/K
A
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
100
20
–0.7
±
24
875
80
0.2
600
300
600
300
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 100 mA
I
F
= 1.5 A
p
TK
p
t
r
t
r
t
f
t
f
Fall Time
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I
=1.5A, t
p
=100 s
F
Type
Symbol
V
F
V
F
I
e
I
e
I
e
I
e
I
e
I
e
I
e
I
e
Min
Typ
3.2
3.2
20
25
30
35
240
300
360
420
22
23
24
25
Max
4.9
4.5
Unit
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
mW
TSHA6500/6501
TSHA6502/6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
I
=100mA,
F
t
p
=20ms
12
16
20
24
150
200
250
300
Radiant Intensity
I
=1.5A, t
p
=100 s
F
Radiant Power
I
=100mA,
F
t
p
=20ms
e
e
e
e
相关PDF资料 |
PDF描述 |
|---|---|
| TSHF5210 | High Speed Infrared Emitting Diode in T-13/4 Package |
| TSHF5400 | High Speed IR Emitting Diode in ?5 mm (T-13/4) Package |
| TSHF5410 | High Speed Infrared Emitting Diode in T-1 3/4 Package |
| TSKS5400 | GaAs Infrared Emitting Diode in Side View Package |
| TSL0709RA | RF/Coaxial Connector; RF Coax Type:BNC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TSHA6500 | 功能描述:红外发射源 5V 22mW 875nm 24 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSHA6500_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Infrared Emitting Diode, 875 nm, GaAlAs |
| TSHA6501 | 功能描述:红外发射源 5V 23mW 875nm 24 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSHA6502 | 功能描述:红外发射源 5V 24mW 875nm 24 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSHA6503 | 功能描述:红外发射源 5V 25mW 875nm 24 deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
发布紧急采购，3分钟左右您将得到回复。