参数资料
型号: TT8U1TR
厂商: Rohm Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET P-CH 20V 2.4A TSST8
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 105 毫欧 @ 2.4A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 1mA
闸电荷(Qg) @ Vgs: 6.7nC @ 4.5V
输入电容 (Ciss) @ Vds: 850pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-TSST
供应商设备封装: TSST8
包装: 标准包装
产品目录页面: 1639 (CN2011-ZH PDF)
其它名称: TT8U1DKR
1.5V Drive Pch +SBD MOSFET
TT8U1
Structure
Silicon P-channel MOSFET / schottky barrier diode
Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
(1)
(2)
(3)
(4)
Abbreviated symbol : U01
Each lead has same dimensions
Applications
Switching
Inner circuit
Packaging specifications
(8)
(7)
(6)
(5)
Package
Taping
Type
Code
TR
TT8U1
Basic ordering unit (pieces)
3000
? 1
(1) Anode
(2) Anode
(3) Source
(4) Gate
(1)
(2)
(3)
(4)
(5) Drain
(6) Drain
(7) Cathode
Absolute maximum ratings (Ta=25 ° C)
<MOSFET>
? 1 BODY DIODE
(8) Cathode
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 20
± 10
Unit
V
V
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
Tch
P D
? 1
? 1
? 2
± 2.4
± 9.6
? 0.8
? 9.6
150
1.0
A
A
A
A
° C
W / ELEMENT
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Symbol
V RM
V R
I F
I FSM ? 1
Tj
Limits
30
20
1.0
3.0
150
Unit
V
V
A
A
° C
Power dissipation
P D
? 2
1.0
W / ELEMENT
? 1 60H Z / 1Cycle
? 2 Mounted on a ceramic board
<MOSFET and Di>
Parameter
Symbol
Limits
Unit
Total power dissipation
Range of Storage temperature
P D
Tstg
?
1.25
? 55 to + 150
W / TOTAL
° C
? Mounted on a ceramic board
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.06 - Rev.A
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