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| 型号： | TWR-ELEV |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 29/48页 |
| 文件大小： | 0K |
| 描述： | TOWER ELEVATOR BOARDS HARDWARE |
| 其它有关文件： | TWR-ELEV Dummy Schematic TWR-ELEV Functional Schematic |
| 产品培训模块： | MCF51CN Family - Ultimate Ethernet Solutions Tower System |
| 特色产品： | The Tower System |
| 标准包装： | 1 |
| 系列： | ColdFire® |
| 附件类型： | 2 个升降机板 |
| 适用于相关产品： | Freescale 电源塔系统 |
| 产品目录页面： | 734 (CN2011-ZH PDF) |
| 相关产品： | TWR-SER-ND - TOWER SERIAL I/O HARDWARE TWR-MCF51CN-ND - KIT TOWER BOARD TWR-MCF51CN-KIT-ND - KIT TOWER BOARD/SERIAL/ELEVATOR |
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Electrical Characteristics
MCF51CN128 ColdFire Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
35
3.12.5
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory section of the MCF51CN128 Reference Manual.
3.13
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependent on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
Table 22. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
-40
°C to 85 °CV
prog/erase
1.8
—
3.6
V
D
Supply voltage for read operation
VRead
1.8
—
3.6
V
D
Internal FCLK frequency1
1 The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
5—
6.67
μs
P
Longword program time (random location)(2)
tprog
9tFcyc
P
Longword program time (burst mode)(2)
tBurst
4tFcyc
P
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
P
Mass erase time(2)
tMass
20,000
tFcyc
D
Longword program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 3.3 V, bus frequency = 8.0 MHz.
RIDDBP
—
9.7
—
mA
D
Page erase current3
RIDDPE
—
7.6
—
mA
C
Program/erase endurance4
TL to TH = –40°C to + 85°C
T = 25
°C
4 Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TWR-ELEV | 制造商:Freescale Semiconductor 功能描述:Tower System - Elevator Boards |
| TWR-FRAM | 功能描述:存储器 IC 开发工具 Freescale Tower FRAM Daughter Card RoHS:否 制造商:STMicroelectronics 产品:Reference Boards 工具用于评估:M24LR64-R 存储容量:64 kbit 存储类型:EEPROM 工作电源电压:1.8 V to 5.5 V |
| TWR-HW | 功能描述:WIRELESS RELAY 120/277 HARD WIRE 制造商:thomas research products 系列:ZenNet 零件状态:过期 配件类型:无线继电器 配套使用产品/相关产品:* 标准包装:1 |
| TWR-IND-IO | 功能描述:界面开发工具 IND CTRL Tower IO RoHS:否 制造商:Bourns 产品:Evaluation Boards 类型:RS-485 工具用于评估:ADM3485E 接口类型:RS-485 工作电源电压:3.3 V |
| TWR-K20D50M | 功能描述:开发板和工具包 - ARM PK20DX128VLH5 EvBrd RoHS:否 制造商:Arduino 产品:Development Boards 工具用于评估:ATSAM3X8EA-AU 核心:ARM Cortex M3 接口类型:DAC, ICSP, JTAG, UART, USB 工作电源电压:3.3 V |
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