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| 型号： | TXS02326RGER |
| 厂商： | Texas Instruments |
| 文件页数： | 10/35页 |
| 文件大小： | 0K |
| 描述： | IC SIM CARD MUX 2:1 24VQFN |
| 产品培训模块： | Voltage Level Translation |
| 标准包装： | 1 |
| 应用： | 移动电话 |
| 接口： | I²C |
| 电源电压： | 1.7 V ~ 3.3 V |
| 封装/外壳： | 24-VFQFN 裸露焊盘 |
| 供应商设备封装： | 24-VQFN 裸露焊盘（4x4） |
| 包装： | 标准包装 |
| 安装类型： | 表面贴装 |
| 其它名称： | 296-27948-6 |
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SCES795C
– SEPTEMBER 2010 – REVISED FEBRUARY 2011
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
Level Translator
(1)
MIN
MAX
UNIT
V_I/O
Supply voltage range
–0.3
4.0
V
V_I/O-port
–0.5
4.6
VI
Input voltage range
VSIMx-port
–0.5
4.6
V
Control inputs
–0.5
4.6
V_I/O-port
–0.5
4.6
Voltage range applied to any output in the high-impedance or
VO
V
power-off state
VSIMx-port
–0.5
4.6
V_I/O-port
–0.5
4.6
VO
Voltage range applied to any output in the high or low state
V
VSIMx-port
–0.5
4.6
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
Continuous current through VCCA or GND
±100
mA
Tstg
Storage temperature range
–65
150
°C
(1)
Stresses beyond those listed under
"absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under
"recommended operating
conditions
" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
LDO
(1)
MIN
MAX
UNIT
VIN
Input voltage range
–0.3
6
V
VOUT
Output voltage range
–0.3
6
V
TJ
Junction temperature range
–55
150
°C
Tstg
Storage temperature range
–55
150
°C
Human-Body Model (HBM)
2
kV
ESD rating
Charged-Device Model (CDM)
1000
V
(1)
Stresses beyond those listed under
"absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under
"recommended operating
conditions
" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
18
2010–2011, Texas Instruments Incorporated
Product Folder Link(s): TXS02326
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