参数资料
型号: TXS02326RGER
厂商: Texas Instruments
文件页数: 15/35页
文件大小: 0K
描述: IC SIM CARD MUX 2:1 24VQFN
产品培训模块: Voltage Level Translation
标准包装: 1
应用: 移动电话
接口: I²C
电源电压: 1.7 V ~ 3.3 V
封装/外壳: 24-VFQFN 裸露焊盘
供应商设备封装: 24-VQFN 裸露焊盘(4x4)
包装: 标准包装
安装类型: 表面贴装
其它名称: 296-27948-6
SCES795C
– SEPTEMBER 2010 – REVISED FEBRUARY 2011
SWITCHING CHARACTERISTICS
VSIMx = 1.8 V or 2.95 V Supplied by Internal LDO, VBAT = 2.3V to 5.5V
over recommended operating free-air temperature range (unless otherwise noted)
V_I/O = 1.7 V to 3.3 V
TEST
PARAMETER
UNIT
CONDITIONS
MIN
MAX
SIM_I/O
Open Drain
210
ns
SIM_I/O
Push Pull
8.6
ns
trA
Baseband side to SIM side
SIM_RST
Push Pull
4.3
ns
SIM_CLK
Push Pull
4
ns
SIMx_I/O
Open Drain
16
ns
SIMx_I/O
Push Pull
6.5
ns
trA
Baseband side to SIM side
SIM_RST
Push Pull
4
ns
SIMx_CLK
Push Pull
5
ns
SIMx_I/O
Open Drain
210
ns
trB
SIM side to Baseband side
SIMx_I/O
Push Pull
10
ns
SIMx_I/O
Open Drain
6
ns
trB
SIM side to Baseband side
SIMx_I/O
Push Pull
8
ns
fmax
SIMx_CLK
Push Pull
5
MHz
SIMCLK to SIMx_CLK
Push Pull
8
ns
SIMRST to SIMx_RST
Push Pull
8
ns
SIMIO to SIMx_IO
Open Drain
260
ns
tPLH
SIMIO to SIMx_IO
Push Pull
10
ns
SIMx_IO to SIMIO
Open Drain
260
ns
SIMx_IO to SIMIO
Push Pull
10.5
ns
SIMCLK to SIMx_CLK
Push Pull
7
ns
SIMRST to SIMx_RST
Push Pull
7
ns
SIMIO to SIMx_IO
Open Drain
23
ns
tPLH
SIMIO to SIMx_IO
Push Pull
8
ns
SIMx_IO to SIMIO
Open Drain
23
ns
SIMx_IO to SIMIO
Push Pull
10
ns
22
2010–2011, Texas Instruments Incorporated
Product Folder Link(s): TXS02326
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