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参数资料
| 型号： | UPA2718GR-A |
| 元件分类： | JFETs |
| 英文描述： | 13 A, 30 V, 0.0145 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | POWER, SOP-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 138K |
| 代理商： | UPA2718GR-A |
Data Sheet G16952EJ1V0DS
2
PA2718GR
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
30 V, VGS = 0 V
–1
A
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m10
A
Gate Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1 mA
–1.0
–2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS =
10 V, ID = 6.5 A
9
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS =
10 V, ID = 6.5 A
7.2
9.0
m
RDS(on)2
VGS =
4.5 V, ID = 6.5 A
9.9
14.5
m
RDS(on)3
VGS =
4.0 V, ID = 6.5 A
11.8
18.2
m
Input Capacitance
Ciss
VDS =
10 V
2810
pF
Output Capacitance
Coss
VGS = 0 V
710
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
460
pF
Turn-on Delay Time
td(on)
VDD =
15 V, ID = 6.5 A
13
ns
Rise Time
tr
VGS =
10 V
18
ns
Turn-off Delay Time
td(off)
RG = 10
510
ns
Fall Time
tf
310
ns
Total Gate Charge
QG
VDD =
24 V
67
nC
Gate to Source Charge
QGS
VGS =
10 V
6.5
nC
Gate to Drain Charge
QGD
ID =
13 A
19
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 13 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 13 A, VGS = 0 V
180
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
14
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS()
10%
90%
VGS
10%
0
VDS()
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
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相关代理商/技术参数 |
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|---|---|
| UPA2719AGR-E1-AT | 功能描述:MOSFET LV 8SOP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| UPA2719AGR-E2-AT | 功能描述:MOSFET P-CH 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| UPA2719GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2720AGR-E1-AT | 制造商:Renesas Electronics Corporation 功能描述: |
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