- 您现在的位置：买卖IC网 > Datasheet目录528 > UPA2755AGR-E2-AT (Renesas Electronics America)MOSFET N-CH DUAL 30V 8-SOIC Datasheet资料下载
参数资料
| 型号： | UPA2755AGR-E2-AT |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 8-SOIC |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 4A，10V |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 650pF @ 10V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-PSOP |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2755AGR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2755AGR is Dual N-channel MOS Field Effect
PACKAGE DRAWING (Unit: mm)
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
8
5
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
? Dual chip type
? Low on-state resistance
1
5.37 MAX.
4
6.0 ±0.3
4.4
0.8
R DS(on)1 = 18 m Ω MAX. (V GS = 10 V, I D = 4.0 A)
R DS(on)2 = 29 m Ω MAX. (V GS = 4.5 V, I D = 4.0 A)
? Low input capacitance
1.27 0.78 MAX.
0.5 ±0.2
0.10
C iss = 650 pF TYP.
0.40
+0.10
–0.05
0.12 M
? Built-in G-S protection diode
? Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C, All terminals are connected.)
Drain to Source Voltage (V GS = 0 V)
V DSS
30
V
Drain Current (pulse)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
Note1
V GSS
I D(DC)
I D(pulse)
± 20
± 8.0
± 32
V
A
A
EQUIVALENT CIRCUIT
(1/2 circuit)
Total Power Dissipation (1 unit)
Note2
P T
1.7
W
Drain
Total Power Dissipation (2 units)
Note2
P T
2.0
W
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
T ch
T stg
I AS
150
? 55 to +150
8
° C
° C
A
Gate
Body
Diode
Single Avalanche Energy
Note3
E AS
6.4
mJ
Gate
Protection
Diode
Source
2. Mounted on ceramic substrate of 2000 mm x 2.2 mm
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2
3. Starting T ch = 25 ° C, V DD = 15 V, R G = 25 Ω , V GS = 20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19282EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008
相关PDF资料 |
PDF描述 |
|---|---|
| UPA2756GR-E2-AT | MOSFET N-CH DUAL 60V 8-SOIC |
| UPA2757GR-E2-AT | MOSFET N-CH DUAL 30V 8-SOIC |
| UPA2790GR-E2-AT | MOSFET N/P-CH 30V 8-SOIC |
| UPA2791GR-E2-AT | MOSFET N/P-CH 30V 8-SOIC |
| UPA602T-T1-A | MOSFET N-CH DUAL 50V SC-59 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2755GR | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| UPA2755GR-A1-E2-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2755GR-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2755GR-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2756GR | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
发布紧急采购，3分钟左右您将得到回复。