参数资料
型号: UPA2755AGR-E2-AT
厂商: Renesas Electronics America
文件页数: 6/9页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V 8-SOIC
标准包装: 2,500
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8A
开态Rds(最大)@ Id, Vgs @ 25° C: 18 毫欧 @ 4A,10V
闸电荷(Qg) @ Vgs: 13nC @ 10V
输入电容 (Ciss) @ Vds: 650pF @ 10V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.173",4.40mm 宽)
供应商设备封装: 8-PSOP
包装: 带卷 (TR)
μ PA2755AGR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
40
35
Pulsed
100
10
V DS = 10 V
P ulsed
30
25
V GS = 10 V
4.5 V
1
T A = 150°C
75°C
25°C
? 40°C
20
15
0.1
0.01
10
0.001
5
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0001
0
1
2
3
4
5
V DS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2.5
V DS = 10 V
I D = 1mA
10
V DS = 10 V
P ulsed
2
1.5
1
0.5
0
1
0.1
0.01
T A = ? 40°C
25°C
75°C
150°C
-50
-25
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
V GS = 10 V
60
Pulsed
Pulsed
40
40
30
V GS = 4.5 V
20
10
10 V
20
I D = 4.0 A
8.0 A
0
0
1
10
100
0
5
10
15
20
4
I D - Drain Current – A
Data Sheet G19282EJ1V0DS
V GS - Gate to Source Voltage - V
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