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参数资料
| 型号： | UPA679TB-T2-A |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V SC-70 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 350mA，250mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 570 毫欧 @ 300mA，4.5V |
| 输入电容 (Ciss) @ Vds： | 28pF @ 10V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-88 |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA679TB
N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The μ PA679TB is a switching device, which can be driven directly by a 2.5 V power source.
The μ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on.
FEATURES
? 2.5 V drive available
PACKAGE DRAWING (Unit: mm)
0.2 - 0
0.15 - 0.05
? Low on-state resistance
N-ch R DS(on)1 = 0.57 ? MAX. (V GS = 4.5 V, I D = 0.30 A)
R DS(on)3 = 0.88 ? MAX. (V GS = 2.5 V, I D = 0.15 A)
+0.1
+0.1
P-ch R DS(on)1 = 1.45 ? MAX. (V GS = ? 4.5 V, I D = ? 0.20 A)
R DS(on)3 = 2.98 ? MAX. (V GS = ? 2.5 V, I D = ? 0.15 A)
? Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
6
1
5
2
4
3
0 to 0.1
PART NUMBER
PACKAGE
0.65
0.65
0.7
μ PA679TB
Marking: YA
SC-88 (SSP)
1.3
2.0 ±0.2
0.9 ±0.1
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V) V DSS
20 / ? 20
V
PIN CONNECTION (Top View)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
V GSS
I D(DC)
I D(pulse)
± 12 / m 12
± 0.35 / m 0.25
± 1.40 / m 1.00
V
A
A
6
5
4
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
Note2
P T
T ch
T stg
0.2
150
–55 to +150
W
°C
°C
1.
2.
3.
4.
5.
Source 1
Gate 1
Drain 2
Source 2
Gate 2
2. Mounted on FR-4 board of 2500 mm x 1.1 mm
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2
1
2
3
6.
Drain 1
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
V ESD = ± 100 V TYP. (C = 200 pF, R = 0 ? , Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16615EJ1V0DS00 (1st edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2003
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