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参数资料
| 型号： | UT65L168(I) |
| 英文描述： | Pseudo Low Power SRAM |
| 中文描述： | 伪低功率SRAM |
| 文件页数： | 2/13页 |
| 文件大小： | 175K |
| 代理商： | UT65L168(I) |
UTRON
UT65L1616(E)/UT65L1616(I)
Rev. 1.1
1M X 16 BITS LOW POWER PSEUDO SRAM
UTRON TECHNOLOGY INC.
P80080
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
10
PAGE READ CYCLE ( ZZ = WE =VIH, 8 words access )
data
valid
High - Z
tPAA
tPC
data
valid
tPAA
data
valid
tPAA
data
valid
tPAA
data
valid
tPAA
data
valid
tPAA
data
valid
tPAA
data
valid
tOHZ
tBHZ
tCHZ
tOH
tOLZ
tBA
tACE
tCLZ
tBLZ
tOE
tPC
tRC
tAA
A0~A2
A3~A18
CE
UB , LB
OE
Data Out
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tCHZ(Max.) is less than tCLZ(Min.) both for a given device and from device to device
interconnection.
3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us
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