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参数资料
| 型号： | UT65L168(I) |
| 英文描述： | Pseudo Low Power SRAM |
| 中文描述： | 伪低功率SRAM |
| 文件页数： | 7/13页 |
| 文件大小： | 175K |
| 代理商： | UT65L168(I) |
UTRON
UT65L1616(E)/UT65L1616(I)
Rev. 1.1
1M X 16 BITS LOW POWER PSEUDO SRAM
UTRON TECHNOLOGY INC.
P80080
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
3
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on any pin relative to VSS
VIN, VOUT
-0.2 to Vcc+0.3
V
Voltage on Vcc supply relative to VSS
VCC
-0.2 to 4.2
V
Extended
TA
-25 to 80
℃
Operating Temperature
Industrial
TA
-40 to 85
℃
Storage Temperature
TSTG
-65 to 150
℃
Power Dissipation
PD
1.0
W
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
I/O OPERATION
MODE
CE
OE
WE LB
UB
ZZ
I/O1-I/O8 I/O9-I/O16
SUPPLY CURRENT
Standby
H
X
H
High – Z
ISB, ISB1
Output Disable
L
H
L
X
L
H
High – Z
ICC,ICC1,ICC2
Read
L
H
L
H
L
H
L
H
DOUT
High – Z
DOUT
High – Z
DOUT
ICC,ICC1,ICC2
Write
L
X
L
H
L
H
L
H
DIN
High – Z
DIN
High – Z
DIN
ICC,ICC1,ICC2
Deep Power Down
X
L
High – Z
ISB0
Note: H = VIH, L=VIL, X = Don't care.
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