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参数资料
| 型号： | UT65L168(I) |
| 英文描述： | Pseudo Low Power SRAM |
| 中文描述： | 伪低功率SRAM |
| 文件页数： | 8/13页 |
| 文件大小： | 175K |
| 代理商： | UT65L168(I) |
UTRON
UT65L1616(E)/UT65L1616(I)
Rev. 1.1
1M X 16 BITS LOW POWER PSEUDO SRAM
UTRON TECHNOLOGY INC.
P80080
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
4
DC ELECTRICAL CHARACTERISTICS (VCC = 2.5V~3.3V)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Power Voltage
VCC
2.5
3.0
3.3
V
2.5
3.0
3.3
I/O operating voltage
Vccq
1.8
2.0
2.5
V
Input High Voltage
VIH
*1*3
2.2
-
VCC+0.2
V
Input Low Voltage
VIL
*2*3
-0.2
-
0.4
V
Input Leakage Current
ILI
VSS ≦VIN ≦VCC
- 1
-
1
A
Output Leakage Current
ILO
VSS ≦VI/O ≦VCC; Output Disable
- 1
-
1
A
Output High Voltage
VOH
IOH= -1mA
2.2
2.7
-
V
Output Low Voltage
VOL
IOL= 2mA
-
0.4
V
Icc
Cycle time=Min,100%duty, II/O=0mA
CE =VIL , ZZ = VIH , VIN=VIL or VIH
-
22
30
mA
Average Operating
Current
Icc1
Cycle time=1s,100%duty, II/O=0mA
CE ≦0.2V, ZZ = VIH
VIN ≦ 0.2V or VIN ≧Vcc-0.2V
-
7
mA
Standby Current (TTL)
ISB
CE = ZZ =VIH, other inputs =VIL or VIH
-
0.3
mA
Standby Current (CMOS)
ISB1
CE ≧Vcc-0.2 , ZZ ≧Vcc-0.2V
other inputs = 0 ~ Vcc
LL
-
50
70
A
Deep Power Down
ISB0
ZZ ≦0.2V, other pins = 0 ~ Vcc
No refresh
LL
-
10
A
Note :
*1.Overshoot : Vcc+1.0V in case of pulse width ≦ 20ns.
*2.Undershoot : -1.0V in case of pulse width ≦ 20ns.
*3.Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE (TA=25℃, f=1.0MHz)
PARAMETER
SYMBOL
MIN.
MAX
UNIT
Input Capacitance
CIN
-
8
pF
Input/Output Capacitance
CI/O
-
8
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
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