参数资料
型号: W25Q16CVZPAG
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 16M X 1 SPI BUS SERIAL EEPROM, PDSO8
封装: 6 X 5 MM, GREEN, WSON-8
文件页数: 24/79页
文件大小: 1131K
代理商: W25Q16CVZPAG
W25Q16CV
- 30 -
7.2.13 Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction
except that data is output on four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be
executed before the device will accept the Fast Read Quad Output Instruction (Status Register bit QE
must equal 1). The Fast Read Quad Output Instruction allows data to be transferred from the W25Q16CV
at four times the rate of standard SPI devices.
The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see AC
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address
as shown in Figure 12. The dummy clocks allow the device's internal circuits additional time for setting up
the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins should be
high-impedance prior to the falling edge of the first data out clock.
/CS
CLK
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (6Bh)
High Impedance
8
9
10
28
29
30
32
33
34
35
36
37
38
39
4
0
24-Bit Address
23
22
21
3
2
1
0
*
31
/CS
CLK
Dummy Clocks
0
40
41
42
43
44
45
46
47
5
1
High Impedance
4
5
High Impedance
6
2
7
3
High Impedance
4
0
5
1
6
2
7
3
4
0
5
1
6
2
7
3
4
0
5
Byte 1
6
7
1
6
2
7
3
Byte 2
Byte 3
Byte 4
IO
0 switches from
Input to Output
IO
0
IO
1
IO
2
IO
3
IO
0
IO
1
IO
2
IO
3
= MSB
*
Figure 12. Fast Read Quad Output Instruction Sequence Diagram
相关PDF资料
PDF描述
WF128K32-150G2LC5 128K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68
WS128K32L-55G2UCA 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68
WE128K32N-200HSQ 512K X 8 EEPROM 5V MODULE, 200 ns, CHIP66
WF128K32NA-150HC 512K X 8 FLASH 12V PROM MODULE, 150 ns, CHIP66
WS512K32-35HI 2M X 8 MULTI DEVICE SRAM MODULE, 35 ns, CHIP66
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