参数资料
型号: W25Q64CVSSIG
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 64M X 1 SPI BUS SERIAL EEPROM, PDSO8
封装: 0.208 INCH, GREEN, SOIC-8
文件页数: 43/79页
文件大小: 1086K
代理商: W25Q64CVSSIG
W25Q64CV
- 48 -
7.2.28 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7Ah”
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit
equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set from
0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the
program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”
will be ignored by the device. The Erase/Program Resume instruction sequence is shown in Figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (7Ah)
Mode 0
Mode 3
Resume previously
suspended Program or
Erase
Figure 26. Erase/Program Resume Instruction Sequence
相关PDF资料
PDF描述
W25Q64CVZPAP 64M X 1 SPI BUS SERIAL EEPROM, PDSO8
WMS128K8C-25CQE 128K X 8 STANDARD SRAM, 25 ns, CDIP32
WMF512K8X-150DEC5 512K X 8 FLASH 5V PROM, 150 ns, CDSO32
WME128K8X-200DEC 128K X 8 EEPROM 5V, 200 ns, CDSO32
WMF512K8X-70FEM5 512K X 8 FLASH 5V PROM, 70 ns, CDFP32
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