参数资料
型号: W29GL032CB7A
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 2M X 16 FLASH 3V PROM, 80 ns, PBGA48
封装: GREEN, VFBGA-48
文件页数: 10/65页
文件大小: 650K
代理商: W29GL032CB7A
W29GL032C
12
7.2.15 Buffer Write Abort
Write Buffer Programming Sequence will ABORT, if the following condition takes place:
The word count minus one loaded is bigger than the page buffer size (32) during, “Number of
Locations to Program.”
Sector Address written is not the same as the one specified during the Write-Buffer-Load
instruction.
If the Address/Data set is not inside the Write Buffer Page range which was set during cycle
5’s first initial write-buffer-page select address/data set.
No “Program Confirm Instruction” after the assigned number of “data load” cycles.
After Write Buffer Abort, the status register will be DQ1=1, DQ7 = DATA# (last address loaded),
DQ6=toggle, DQ5=0. This status represents a Write Buffer Programming Operation was ABORTED. A
Write-to-Buffer-Abort Reset instruction sequence has to be written to reset the device back to the read
array mode.
DQ1 is the bit for Buffer Write Abort. When DQ1=1, the device will abort from buffer write operation
and go back to read status register shown in the following table:
Status
DQ7
DQ6
DQ5
DQ3
DQ2
DQ1
RY/#BY
Buffer Write Busy
DQ7#
Toggle
0
N/A
0
Buffer Write Abort
DQ7#
Toggle
0
N/A
1
0
Buffer Write Exceeded Time Limit
DQ7#
Toggle
1
N/A
0
Table 7-8
Polling Buffer Write Abort Flag
7.2.16 Accelerated Programming Operation
The device will enter the Accelerated Programming mode by applying high voltage (VHH) to the
#WP/ACC pin. Accelerated Programming mode allows the system to skip the normal unlock
sequences instruction and program byte/word locations directly. The current drawn from the #WP/ACC
pin during accelerated programming is no more that IACC1. Important Note: Do not exceed 10
accelerated programs per sector.
7.2.17 Automatic Select Bus Operation
There are basically two methods to access Automatic Selection Operations; Automatic Select
Instructions through software commands and High Voltage applied to A9.
See Automatic Select
Instruction Sequence later on in this section for details of equivalent instruction operations that do not
require the use of VHH. The following five bus operations require A9 to be raised to VHH.
7.2.17.1
Sector Lock Status Verification
To verify the protected state of any sector using bus operations, execute a Read Operation with VHH
applied to A9, the sector address present on address pins A[20:12], address pins A6, A3, A2, and A0
held Low, and address pins A1 held High. If DQ0 is Low, the sector is considered not protected, and if
DQ0 is High, the sector is considered to be protected.
7.2.17.2
Read Silicon Manufacturer ID Code
Winbond’s 29GL family of Parallel Flash memories feature an Industry Standard compatible
Manufacturer ID code of 01h. To verify the Silicon Manufacturer ID code, execute a Read Operation
with VHH applied to the A9 pin and address pins A6, A3, A2, A1 and A0 are held Low. The ID code
can then be read on data bits DQ[7:0].
相关PDF资料
PDF描述
W29GL032CB7S 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
WV3HG2128M64EEU665D4SG 256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
WF128K32-120HSC5A 512K X 8 FLASH 5V PROM MODULE, 120 ns, CHIP66
WF512K32-90G4I5 512K X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68
WPS512K8LB-70GI 512K X 8 STANDARD SRAM, 70 ns, PDSO32
相关代理商/技术参数
参数描述
W29GL032CB7ATR 制造商:Winbond Electronics Corp 功能描述:PF, 32M-BIT, 4KB UNIFORM SECTO
W29GL032CB7B 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 70NS 64LFBGA
W29GL032CB7S 功能描述:IC FLASH 32MBIT 70NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(单线) 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商设备封装:8-MSOP 包装:带卷 (TR)
W29GL032CH7B 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 70NS 64LFBGA
W29GL032CH7T 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 70NS 56TSOP