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参数资料
| 型号： | W3E32M72SR-250SBC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.8 ns, PBGA208 |
| 封装： | 16 X 25 MM, PLASTIC, BGA-208 |
| 文件页数： | 2/19页 |
| 文件大小： | 765K |
| 代理商： | W3E32M72SR-250SBC |
W3E32M72SR-XSBX
10
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2006
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specications without notice.
is automatically enabled upon exiting SELF REFRESH (A
DLL reset and 200 clock cycles must then occur before a
READ command can be issued). Input signals except CKE
are “Don’t Care” during SELF REFRESH. VREF voltage is
also required for the full duration of SELF REFRESH.
The procedure for exiting self refresh requires a sequence
of commands. First, CK and CK# must be stable prior
to CKE going back HIGH. Once CKE is HIGH, the DDR
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQ Supply relative to Vss
-1 to 3.6
V
Voltage on I/O pins relative to Vss
-0.5V to VCCQ +0.5V
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CAPACITANCE (NOTE 13)
Parameter
Symbol
Max
Unit
Input Capacitance: CK/CK#
CI1
8
pF
Addresses, BA0-1 Input Capacitance
CA
10
pF
Input Capacitance: All other input-only pins
CI2
9pF
Input/Output Capacitance: I/Os
CIO
10
pF
BGA THERMAL RESISTANCE
Description
Symbol Typical Units
Notes
Junction to Ambient (No Airow)
Theta JA
15.8
°C/W
1
Junction to Ball
Theta JB
15.7
°C/W
1
Junction to Case (Top)
Theta JC
7.2
°C/W
1
Note: These typical thermal resistances are for each DRAM die; if using total power of
the MCP, divide above values by ve(5).
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.whiteedc.
com in the application notes section for modeling conditions.
SDRAM must have NOP commands issued for tXSNR,
because time is required for the completion of any internal
refresh in progress.
A simple algorithm for meeting both refresh and DLL
requirements is to apply NOPs for tXSNR time, then a DLL
Reset and NOPs for 200 additional clock cycles before
applying any other command.
REGISTER RECOMMENDED OPERATING CONDITIONS
Parameter/Condition
Min
Max
Unit
VIH AC high-level input voltage
Data inputs
VREF+310mV
V
VIL AC low-level input voltage
Data inputs
VREF-310mV
V
VIH High-level input voltage
RESET#
1.7
V
VIL Low-level input voltage
RESET#
0.7
V
Note: The RESET# input of the device must be held at a valid logic level (not oating) to ensure proper device operation.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M72SR-250SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72SR-250SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
| W3E32M72SR-266SBC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
| W3E32M72SR-266SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72SR-266SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
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