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参数资料
| 型号： | W3E32M72SR-250SBC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.8 ns, PBGA208 |
| 封装： | 16 X 25 MM, PLASTIC, BGA-208 |
| 文件页数： | 8/19页 |
| 文件大小： | 765K |
| 代理商： | W3E32M72SR-250SBC |
W3E32M72SR-XSBX
16
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2006
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specications without notice.
47. Random addressing changing: 50% of data changing at every transfer.
48. Random addressing changing: 100% of data changing at every transfer.
49. CKE must be active (high) during the entire time a refresh command is executed.
That is, from the time the AUTO REFRESH command is registered, CKE must be
active at each rising clock edge, until tRFC has been satised.
50. ICC2N species the DQ, DQS, and DQM to be driven to a valid high or low logic
level. ICC2Q is similar to ICC2F except ICC2Q species the address and control inputs
to remain stable. Although ICC2F, ICC2N, and ICC2Q are similar, ICC2F is “worst case.”
51. Whenever the operating frequency is altered, not including jitter, the DLL is
required to be reset followed by 200 clock cycles before any READ command.
52. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20
MHz. Any noise above 20 MHz at the DRAM generated from any source other
than that of the DRAM itself may not exceed the DC coltage range of 2.6V ±
100mV.
53. All AC timings do not count extra clock needed on address and control signals to
be registered.
54. DDR currents only. Register currents not included.
相关PDF资料 |
PDF描述 |
|---|---|
| W3E32M72SR-266SBI | 32M X 72 DDR DRAM, 0.75 ns, PBGA208 |
| W3E64M16S-266NBI | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| W3E64M16S-250NBI | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
| W3E64M16S-266NBC | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| W3E64M16S-200NBM | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M72SR-250SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72SR-250SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
| W3E32M72SR-266SBC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
| W3E32M72SR-266SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72SR-266SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
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