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参数资料
| 型号： | W3E32M72SR-250SBC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.8 ns, PBGA208 |
| 封装： | 16 X 25 MM, PLASTIC, BGA-208 |
| 文件页数： | 4/19页 |
| 文件大小： | 765K |
| 代理商： | W3E32M72SR-250SBC |
W3E32M72SR-XSBX
12
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2006
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ICC SPECIFICATIONS AND CONDITIONS
(NOTES 1-5, 10, 12, 14, 46, 54)
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
MAX
Symbol 250MHz
266MHz
200MHz
Units
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs
changing once per clock cyle; Address and control inputs changing once every two clock cycles; (22, 47)
ICC0
650
575
mA
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN); IOUT =
0mA; Address and control inputs changing once per clock cycle (22, 47)
ICC1
800
725
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK (MIN); CKE =
LOW; (23, 32, 49)
ICC2P
25
mA
IDLE STANDBY CURRENT: CS = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and other control
inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (50)
ICC2F
225
200
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN); CKE =
LOW (23, 32, 49)
ICC3P
175
150
mA
ACTIVE STANDBY CURRENT: CS = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS (MAX); tCK = tCK
(MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other control inputs changing once
per clock cycle (22)
ICC3N
250
225
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control inputs changing
once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 47)
ICC4R
825
725
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs changing
once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle (22)
ICC4W
755
675
mA
AUTO REFRESH CURRENT
tREFC = tRC (MIN) (49)
ICC5
1,450
1,400
mA
tREFC = 7.8125μs (27, 49)
ICC5A
50
mA
SELF REFRESH CURRENT: CKE 0.2V
Standard (11)
ICC6
25
mA
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN); tCK = tCK (MIN);
Address and control inputs change only during Active READ or WRITE commands. (22, 48)
ICC7
2,000
1,750
mA
相关PDF资料 |
PDF描述 |
|---|---|
| W3E32M72SR-266SBI | 32M X 72 DDR DRAM, 0.75 ns, PBGA208 |
| W3E64M16S-266NBI | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| W3E64M16S-250NBI | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
| W3E64M16S-266NBC | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| W3E64M16S-200NBM | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M72SR-250SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72SR-250SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
| W3E32M72SR-266SBC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
| W3E32M72SR-266SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72SR-266SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
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