- 您现在的位置：买卖IC网 > PDF目录68451 > W3E32M72SR-250SBC (WHITE ELECTRONIC DESIGNS CORP) 32M X 72 DDR DRAM, 0.8 ns, PBGA208 PDF资料下载
参数资料
| 型号： | W3E32M72SR-250SBC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.8 ns, PBGA208 |
| 封装： | 16 X 25 MM, PLASTIC, BGA-208 |
| 文件页数： | 3/19页 |
| 文件大小： | 765K |
| 代理商： | W3E32M72SR-250SBC |
W3E32M72SR-XSBX
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2006
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DDR DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(NOTES 1-5, 16)
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage (36, 41)
VCC
2.3
2.7
V
I/O Supply Voltage (36, 41, 44)
VCCQ
2.3
2.7
V
Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-2
2
μA
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCCQ
IOZ
-5
5
μA
Output Levels: Full drive option (37, 39)
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-12
-
mA
IOL
12
-
mA
Output Levels: Reduced drive option (38, 39)
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)
IOHR
-9
-
mA
IOLR
9-
mA
I/O Reference Voltage (6,44)
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage (7, 44)
VTT
VREF - 0.04
VREF + 0.04
V
AC INPUT OPERATING CONDITIONS
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH
VREF +0.310
—
V
Input Low (Logic 0) Voltage
VIL
—VREF -0.310
V
REGISTER ELECTRICAL CHARACTERISTICS
Parameter
Test Conditions
VCC and VCCQ Min
Typ
Max
Unit
II
All inputs
VI = VCC or GND
2.7V
-5
+5
μA
ICC
Static standby
RESET# = GND
2.7V
10
μA
Static operating
RESET# = VCC, VI = VIH(AC) or VIL(AC)
IO = 0
112
mA
ICCD
Dynamic operating
– clock only
RESET# = VCC, VI = VIH(AC) or VIL(AC), CK and CK# switching
50% duty cycle
IO = 0
2.5V
56
μA/ MHz
Dynamic operating
– per each data input
RESET# = VCC, VI = VIH(AC) or VIL(AC). CK and CK#
switching 50% duty cycle. All data input switching at one-half
clock frequency, 50% duty cycle
180
μA/clock
MHz
Note: All typical values are at VCC = 2.5V, TA = 25°C.
相关PDF资料 |
PDF描述 |
|---|---|
| W3E32M72SR-266SBI | 32M X 72 DDR DRAM, 0.75 ns, PBGA208 |
| W3E64M16S-266NBI | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| W3E64M16S-250NBI | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
| W3E64M16S-266NBC | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| W3E64M16S-200NBM | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M72SR-250SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72SR-250SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
| W3E32M72SR-266SBC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
| W3E32M72SR-266SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72SR-266SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 REGISTERED DDR SDRAM |
发布紧急采购，3分钟左右您将得到回复。