- 您现在的位置：买卖IC网 > PDF目录140394 > W3H64M72E-533ESI (WHITE ELECTRONIC DESIGNS CORP) 64M X 72 DDR DRAM, 0.5 ns, PBGA208 PDF资料下载
参数资料
| 型号： | W3H64M72E-533ESI |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| 封装： | 17 X 23 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 15/30页 |
| 文件大小： | 999K |
| 代理商： | W3H64M72E-533ESI |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页当前第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页
W3H64M72E-XSBX
22
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
December 2006
Rev. 2
ADVANCED*
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DC OPERATING CONDITIONS
All voltages referenced to VSS
Parameter
Symbol
Min
Typical
Max
Unit
Notes
Supply voltage
VCC
1 .7
1 .8
1 .9
V
1
I/O Supply voltage
VCCQ
1 .7
1 .8
1 .9
V
4
I/O Reference voltage
VREF
0.49 x VCCQ
0.50 x VCCQ
0.51 x VCCQ
V2
I/O Termination voltage
VTT
VREF-0.04
VREF
VREF + 0.04
V
3
Notes:
1.
VCC VCCQ must track each other. VCCQ must be less than or equal to VCC.
2.
VREF is expected to equal VCCQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed ±1 percent of the DC
value. Peak-to-peak AC noise on VREF may not exceed ±2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
3.
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
4.
VCCQ tracks with VCC track with VCC.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
MIN
MAX
U nit
VCC
Voltage on VCC pin relative to VSS
-1.0
2.3
V
VCCQ
Voltage on VCCQ pin relative to VSS
-0.5
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
-0.5
2.3
V
TSTG
Storage temperature
-55
125
°C
IL
Input leakage current; Any input 0V<VIN<VCC; VREF input
0V<VIN<0.95V; Other pins not under test = 0V
Command/Address,
RAS#, CAS#, WE#,
CS#, CKE
-25
25
A
CK, CK#
-10
10
A
DM
-5
5
A
IOZ
Output leakage current;
0V<VOUT<VCCQ; DQs and ODT are disable
DQ, DQS, DQS#
-5
5
A
IVREF
VREF leakage current; VREF = Valid VREF level
-10
10
A
INPUT/OUTPUT CAPACITANCE
TA = 25°C, f = 1MHz, VCC = VCCQ = 1.8V
Parameter
Symbol
Max
Unit
Input capacitance (A0 - A12, BA0 - BA2 ,CS#, RAS#,CAS#,WE#, CKE, ODT)
CIN1
TBD
pF
Input capacitance CK, CK#
CIN2
TBD
pF
Input capacitance DM, DQS, DQS#
CIN3
TBD
pF
Input capacitance DQ0 - 71
COUT
TBD
pF
相关PDF资料 |
PDF描述 |
|---|---|
| WS128K32V-35HC | 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, HIP66 |
| WS128K32V-55HQ | 512K X 8 MULTI DEVICE SRAM MODULE, 55 ns, HIP66 |
| WS128K32V-55HS | 512K X 8 MULTI DEVICE SRAM MODULE, 55 ns, HIP66 |
| WMF256K8-70FEC5 | 256K X 8 FLASH 5V PROM, 70 ns, CDFP32 |
| WPF2M32V-90PSC5T | 2M X 32 FLASH 5V PROM MODULE, 90 ns, PSMA80 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H64M72E-533ESM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H64M72E-533SB | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H64M72E-533SBC | 制造商:Microsemi Corporation 功能描述:64M X 72 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M72E-533SBI | 制造商:Microsemi Corporation 功能描述:64M X 72 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M72E-533SBM | 制造商:Microsemi Corporation 功能描述:64M X 72 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk |
发布紧急采购，3分钟左右您将得到回复。