参数资料
型号: W942504CH-7
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 64M X 4 DDR DRAM, 0.75 ns, PDSO66
封装: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件页数: 4/45页
文件大小: 1261K
代理商: W942504CH-7
W942504CH
- 12 -
(8)
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set
equal to VREF and must track variations in the DC level of VREF.
(9)
These parameters depend on the output loading. Specified values are obtained with the output open.
(10) Transition times are measured between VIH min(AC) and VIL max(AC).Transition (rise and fall) of input signals have a
fixed slope.
(11) IF the result of nominal calculation with regard to tCK contains more than one decimal place, the result is rounded up to
the nearest decimal place.
(i.e., tDQSS = 0.75
× tCK, tCK = 7.5 nS, 0.75 × 7.5 ns = 5.625 ns is rounded up to 5.6 nS.)
(12) VX is the differential clock cross point voltage where input timing measurement is referenced.
(13) VID is magnitude of the difference between CLK input level and CLK input level.
(14) VISO means {VICK(CLK)+VICK( CLK )}/2.
(15) Refer to the figure below.
CLK
VSS
VICK
VX
VICK
VID(AC)
0 V Differential
VISO
VISO(min)
VISO(max)
VSS
(16) tAC and tDQSCK depend on the clock jitter. These timing are measured at stable clock.
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