参数资料
| 型号： | W949D6CBHX5E |
| 厂商： | Winbond Electronics |
| 文件页数： | 2/60页 |
| 文件大小： | 0K |
| 描述： | IC LPDDR SDRAM 512MBIT 60VFBGA |
| 标准包装： | 312 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 LPDDR SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 60-TFBGA |
| 供应商设备封装： | 60-VFBGA（8x9） |
| 包装： | 托盘 |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
7.3 Mode Register Set.................................................................................................................. 25
7.3.1 Mode Register Set Command ........................................................................................................ 25
7.3.2 Mode Register Set Command Timing ............................................................................................ 26
7.4. Active .................................................................................................................................... 26
7.4.1 Active Command ............................................................................................................................ 26
7.4.2 Bank Activation Command Cycle ................................................................................................... 27
7.5. Read ..................................................................................................................................... 27
7.5.1 Read Command ............................................................................................................................. 28
7.5.2 Basic Read Timing Parameters ..................................................................................................... 28
7.5.3 Read Burst Showing CAS Latency ................................................................................................ 29
7.5.4 Read to Read ................................................................................................................................. 29
7.5.5 Consecutive Read Bursts ............................................................................................................... 30
7.5.6 Non-Consecutive Read Bursts ....................................................................................................... 30
7.5.7 Random Read Bursts ..................................................................................................................... 31
7.5.8 Read Burst Terminate .................................................................................................................... 31
7.5.9 Read to Write ................................................................................................................................. 32
7.5.10 Read to Pre-charge ...................................................................................................................... 32
7.5.11 Burst Terminate of Read .............................................................................................................. 33
7.6 Write....................................................................................................................................... 33
7.6.1 Write Command ............................................................................................................................. 34
7.6.2 Basic Write Timing Parameters ...................................................................................................... 34
7.6.3 Write Burst (min. and max. tDQSS) ............................................................................................... 35
7.6.4 Write to Write .................................................................................................................................. 35
7.6.5 Concatenated Write Bursts ............................................................................................................ 36
7.6.6 Non-Consecutive Write Bursts ....................................................................................................... 36
7.6.7 Random Write Cycles..................................................................................................................... 37
7.6.8 Write to Read ................................................................................................................................. 37
7.6.9 Non-Interrupting Write to Read ...................................................................................................... 37
7.6.10 Interrupting Write to Read ............................................................................................................ 38
7.6.11 Write to Precharge ....................................................................................................................... 38
7.6.12 Non-Interrupting Write to Precharge ............................................................................................ 38
7.6.13 Interrupting Write to Precharge .................................................................................................... 39
7.7 Precharge............................................................................................................................... 39
7.7.1 Precharge Command ..................................................................................................................... 40
7.8 Auto Precharge ...................................................................................................................... 40
7.9 Refresh Requirements............................................................................................................ 40
7.10 Auto Refresh ........................................................................................................................ 40
7.10.1 Auto Refresh Command ............................................................................................................... 41
7.11 Self Refresh ......................................................................................................................... 41
7.11.1 Self Refresh Command ................................................................................................................ 42
7.11.2 Auto Refresh Cycles Back-to-Back .............................................................................................. 42
7.11.3 Self Refresh Entry and Exit .......................................................................................................... 43
7.12 Power Down ......................................................................................................................... 43
7.12.1 Power-Down Entry and Exit ......................................................................................................... 43
7.13 Deep Power Down ............................................................................................................... 44
Publication Release Date: Sep, 21, 2011
-2-
Revision A01-007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D6CBHX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X16, 200MHZ |
| W949D6CBHX5I | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D6CBHX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA 制造商:Winbond 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA |
| W949D6CBHX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X16, 166MHZ, 65NM |
| W949D6CBHX6G | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
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